Power Integrations has pushed its PowiGaN gallium-nitride (GaN) platform to a new level; the company has now rolled out devices rated up to 2200 V which is stated as to be well beyond the voltage limits of other commercially available GaN technologies.
The move positions PowiGaN as a go-to option for high-voltage data centers, EVs, renewables and HVDC infrastructure as designers chase higher bus voltages and greater power density.
What Changes With 2200 V
GaN power switches are steadily replacing silicon transistors across power conversion applications thanks to higher efficiency and faster switching.
But roadmaps for AI data centers, EVs, solar and HVDC are calling for ever-higher voltages and GaN must keep pace.
Alternatives today often mean lower-frequency silicon carbide (SiC) or arrays of stacked, lower-voltage GaN devices, which introduce trade-offs in power density, complexity and reliability.
From 1250 V/1700 V to 2200 V
PowiGaN ICs rated at 1700 V are already in design for single-stage data center auxiliary power supplies, while 1250 V parts offer a simpler alternative to stacked solutions in the main power path of 800 VDC data centers.
The new milestone extends that trajectory, enabling support for even higher bus architectures and future-proofing designs for next-generation AI data centers, EVs, photovoltaic inverters and battery-energy storage systems.
By expanding GaN into voltage ranges traditionally served by SiC, Power Integrations is positioning PowiGaN as a high-frequency alternative for solar, HVDC and advanced industrial power conversion, without the compromises of stacked-device approaches.
Leadership Comments
“Our 2200 V PowiGaN technology provides substantial voltage margin for emerging high-voltage power systems while enabling the high switching frequencies required to maximize power density,” said Jennifer Lloyd, president and CEO at Power Integrations. “Emerging applications include next-generation AI data centers, where industry roadmaps point toward 1500 V distribution architectures, as well as future EV battery and auxiliary power systems operating at increasingly higher output voltages (48V). This milestone 
breakthrough extends the reach of GaN into voltage ranges traditionally served by SiC, enabling a compelling high-frequency alternative for applications such as solar, HVDC and advanced industrial power conversion.”
“The shift to 800 VDC bus architectures in AI data centers is reshaping power semiconductors,” explains Roy Dagher, PhD, technology and market analyst, Compound Semiconductors at Yole Group. “GaN’s voltage ceiling has kept it out of the main power path, ceding that ground to SiC. A 2200 V rating changes this, giving margin for single-stage topologies and future-proofing emerging 1500 V data center and EV designs. We expect the power GaN device market to reach $3.5 billion by 2031, and extending GaN into these higher-voltage applications is an important part of that growth.”(1)
Resources
For further information, please read our White Paper or visit our PowiGaN page.
