Infineon Technologies is deepening its collaboration with NVIDIA to tackle one of the most demanding engineering challenges in modern AI data centers which is power delivery. Timed with NVIDIA’s GTC Berlin, the companies’ latest announcement focuses heavily on the high-voltage intermediate bus converter (IBC) stage of 800-volt direct current (VDC) architectures, where Infineon’s gallium nitride (GaN) technology is taking center stage.
This move builds directly on a partnership first outlined in May 2025 and expanded last October that laid the groundwork for serviceable, hot-swappable 800 VDC server racks.
The Shift to 800 VDC and the Role of the IBC
As AI workloads push rack power consumption toward the megawatt range, traditional power infrastructure hits a wall. To manage this extreme power draw, data centers are increasingly deploying 800 VDC distribution alongside traditional setups.
Within this architecture, the IBC is critical. It steps down the 800 VDC main bus voltage to lower-voltage rails, allowing downstream components to efficiently generate the precise point-of-load voltages that AI processors demand.
This multi-stage approach slashes distribution losses while navigating strict constraints on board space, thermal headroom, and system uptime.
Why GaN Wins at the IBC Stage
For the IBC stage, GaN is proving to be the optimal semiconductor technology. Compared to traditional silicon, GaN switches significantly faster, hitting frequencies up to 1 MHz at the IBC level while keeping losses exceptionally low.
That high switching frequency is a game-changer for board design because it shrinks the required size of magnetic components and passives.
The direct result is higher power density and a much lower board profile, which frees up incredibly scarce rack space. Furthermore, GaN’s ultra-low conduction and switching losses deliver best-in-class conversion efficiency, keeping heat generation in check even as rack power densities soar.
Complete Grid-to-Core Solutions
Infineon’s GaN portfolio supports the full spectrum of high-voltage IBC conversion ratios—whether stepping 800 V down to 50 V, 12 V, or 6 V. This gives data center operators the flexibility to tailor their rack architectures without sacrificing efficiency or density.
Backed by deep in-house manufacturing and system expertise, Infineon provides comprehensive IBC solutions that pair its GaN power switches with its PSoC™ control C3 and EiceDRIVER™ families. The company’s broader portfolio also spans silicon and silicon carbide (SiC) options to support a wide range of design requirements.
Beyond the IBC, the Infineon-NVIDIA collaboration covers the entire data center power chain. This includes advanced power path protection and hot-swap controller functionalities—essential safety and service features for keeping 800 VDC AI server boards running seamlessly. Ultimately, it cements Infineon’s position as a true grid-to-core partner, delivering optimized power solutions from the facility’s main supply straight to the AI processor.
Leadership Comment
“AI is fundamentally reshaping the demands we place on power infrastructure, and semiconductors are at the heart of solving that challenge,” said Jochen Hanebeck, CEO, Infineon Technologies AG. “Our collaboration with NVIDIA on 800 Volt power architectures shows what is possible when deep semiconductor expertise meets the pace of innovation required by AI. Gallium nitride-based system solutions are a key enabler of this next generation of data centers, and Infineon is proud to help power the AI era from grid to core.”
