With a new partnership with GlobalFoundries (GF), onsemi to develop and produce next-generation 650V GaN power devices. In order to provide smaller, more effective systems tailored for AI data centers, automotive, industrial, aerospace, defense, and security applications, onsemi products will integrate GF’s 200mm eMode GaN-on-silicon process with onsemi’s industry-leading silicon drivers, controllers, and thermally enhanced packaging.
onsemi stated that it has partnered with GlobalFoundries(GF) to develop and manufacture advanced gallium nitride (GaN) power products utilizing GF’s innovative 200mm eMode GaN-on-silicon process, starting at 650V.
In order to meet the increasing power demands of AI data centers, electric vehicles, renewable energy, industrial systems, aerospace, defense, and security, this partnership speeds up onsemi’s roadmap for high-performance GaN devices and integrated power stages. It also expands its portfolio with high-voltage products.
In order to produce optimized GaN devices with greater power density and efficiency, the company will combine GF’s 650V GaN technology platform with its industry-leading silicon drivers, controllers, and thermally enhanced packages.
These include solar microinverters and energy storage systems, motor drives and DC-DC converters for industrial and aerospace, defense, and security applications, power supplies and DC-DC converters for AI data centers, and onboard chargers and DC-DC converters for electric vehicles.
These GaN Advantages Include:
- Higher Frequency Operation– By operating at higher switching frequencies, GaN allows designers to reduce component count, system size, and cost while improving efficiency and thermal performance.
- Bidirectional Capability– Bidirectional GaN capabilities enable entirely new topologies that can replace up to four traditional unidirectional transistors, cutting costs and simplifying designs.
- Integrated Functionality– Combining GaN FETs with drivers, controllers, isolation, and protection in a single package allows for faster design cycles and lower electromagnetic interference. The thermally enhanced packages and optimized gate drivers push performance and reliability even at high switching speeds.
Key Comments
“This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650V power devices for high-growth markets. Paired with our silicon drivers and controllers, these GaN products will enable customers to innovate and build smaller, more efficient power systems for AI data centers, EVs, space applications, and beyond. We are on track to begin providing samples to customers in the first half of 2026, and scale rapidly to volume production.” – Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi.
“By combining our 200mm GaN-on-Si platform and U.S.-based manufacturing with onsemi’s deep system and product expertise, we’re accelerating high-efficiency solutions and building resilient supply chains for data centers, automotive, industrial, aerospace and defense, and other critical markets. With onsemi as a key partner, we will continue to advance GaN semiconductors that meet the evolving demands of AI, electrification, and sustainable energy.” – Mike Hogan, Chief Business Officer, GlobalFoundries.
This effort expands onsemi’s leading power semiconductor portfolio, which now includes the full spectrum of GaN technologies – from low, medium and high voltage lateral GaN to ultra high-voltage vertical GaN – enabling system designers to build next-generation power architectures that deliver more power in smaller footprints.
Availability
Will begin sampling in the first half of 2026.
