Toshiba Electronic Devices & Storage Corporation has begun shipping test samples of its new 1200V trench-gate SiC MOSFET, the TW007D120E.
The device is designed primarily for power supply systems in next-generation AI data centers, while also being suitable for renewable energy applications.
As generative AI continues to scale, data centers are facing a sharp rise in power consumption. The shift toward high-power AI servers and the adoption of 800V high-voltage DC (HVDC) architectures are increasing the need for more efficient and compact power conversion systems.
Toshiba’s 1200V trench-gate SiC MOSFET – TW007D120E is aimed at addressing these challenges by improving efficiency while helping reduce system size and energy use.
At the core of the device is Toshiba’s proprietary trench-gate structure, which enables very low on-resistance per unit area. This helps cut conduction losses while also reducing switching losses.
Compared to the company’s existing solutions, the new MOSFET lowers on-resistance per unit area by about 58% and improves the key performance metric of by roughly 52%, delivering a better balance between conduction and switching performance.
The result is more efficient operation, lower heat generation, and improved overall system efficiency in demanding data center environments.
The device is packaged in a QDPAK format with top-side cooling, supporting higher power density and better thermal management both critical for modern AI data center power designs.
Toshiba plans to move into mass production during fiscal year 2026 and is also looking to expand the lineup, including versions for automotive applications. With this development, the company aims to enhance power efficiency and reduce CO? emissions across data centers and industrial systems, contributing to broader decarbonization goals.
The TW007D120E was developed as part of a project supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
Applications
- Power supplies for data centers (AC-DC, DC-DC)
- Photovoltaic inverters
- Uninterruptible power supply (UPS)
- EV charging stations
- Energy storage systems
- Industrial motors
Features
- Low On-resistance and low RDS(on)A
- Low switching loss and low RDS(on) × Qgd
- Low gate drive voltage: VGS_ON=15V to 18V
- High thermal performance QDPAK package
Main Specifications
| (Unless otherwise specified, Tvj=25°C) | ||||
| Part number | TW007D120E | |||
| Package | Name | QDPAK | ||
| Absolute maximum ratings | Drain-source voltage VDSS (V) | 1200 | ||
| Drain current (DC) ID (A) | Tc=25°C | 172 | ||
| Electrical characteristics | Drain-source On-resistance RDS(on) (m?) | VGS=15V | Typ. | 7.0 |
| Gate threshold voltage Vth (V) | VDS=10V | 3.0 to 5.0 | ||
| Total gate charge Qg (nC) | VGS=15V | Typ. | 317 | |
| Gate-drain charge Qgd (nC) | VGS=15V | Typ. | 33 | |
| Input capacitance Ciss (pF) | VDS=800V | Typ. | 13972 | |
| Diode forward voltage VSD (V) | VGS=0V | Typ. | 3.2 | |
| Note: Specifications and schedules for products under development are subject to change without notice. | ||||
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