element14 and Transphorm, a major in the development and production of very durable high-voltage GaN (gallium nitride) semiconductors for power conversion applications, have established a new global distribution agreement.
Across the broadest range of device packages, Transphorm’s SuperGaN® power semiconductors offer one of the biggest power GaN IP portfolios (1,000+ patents) along with excellent performance and high reliability.
Utilizing this technical know-how, a normally-off d-mode GaN platform offers the highest levels of resilience and dependability possible. When compared to other options, end products that use SuperGaN FETs have various advantages, including better power density and efficiency as well as reduced total power system costs.
These and other application benefits are enabled by the core physics of the SuperGaN platform. These physics power revolutionary advancements that are both planned for the future and accessible now, making Transphorm‘s GaN a flexible, future-proof GaN solution.
element14 Product Category Director – Passives & Semiconductors, Jose Lok, said, “Onboarding Transphorm as a new supplier supports our commitment to deliver high quality products to customers while giving them the ability to choose preferred manufacturers as well as the best GaN device package and performance to meet their design needs.”
Benefits of Transphorm’s SuperGaN Devices include:
- Industry-leading efficiency (over 99%)
- Up to 50% higher power density
- Up to 20% lower system cost
- Proven robustness and reliability
- Drop-in and/or drive compatible with all other high voltage power technologies
- Supports a wide range of power applications (from 40W to 7.5kW, with higher power ratings coming soon)
Several industry firsts have resulted from Transphorm’s GaN breakthroughs, including a GaN four quadrant switch with genuine voltage and current bidirectionality control, a 1200 V GaN-on-Sapphire device scheduled for commercial availability in mid-2024, and short-circuit withstand durations of five microseconds.
Jose added, “The primary advantage of SuperGaN is the use of GaN in its native d-mode form. By doing this, the 2DEG channel that is spontaneously created between the undoped GaN and AlGaN layers is left untouched. This yields a simple-to-manufacture solution that harnesses all the 2DEG’s inherent advantages, maximizing the device’s electron mobility and charge while minimizing temperature effects. The result is the highest performing solution spanning the widest power spectrum versus other Si and WBG technologies. These are just some of the many reasons we are now delighted to offer them, with rapid ordering and delivery options, to our customers.”
“The power electronics market across all industries is radically changing as power conversion technologies like our SuperGaN platform drive major design and performance advantages,” said Vipin Bothra, VP of sales for North America and Europe at Transphorm. “Our GaN devices are currently being adopted into a global consumer, industrial and automotive markets. We feel it is critical to enable our customers to access our devices however they prefer. Partnering with well-respected global distributors like element14 is a necessary step to meeting that objective. We look forward to a strong, mutually beneficial relationship that helps revolutionize power systems in everything from adapters and PCs to renewable energy systems and electric vehicles.”
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