Win Semiconductors has officially qualified its NP12-0B process for 40V operation, marking a significant milestone for gallium nitride power technology in high-performance applications.
The company’s 0.12?m gate-length GaN-on-SiC technology brings together multiple transistor improvements that deliver exceptional ruggedness, especially when operating in deep-saturation and high-compression conditions, whether pulsed or continuous wave.
These enhancements worked so well that NP12-0B now passes qualification testing for reliable 40V operation across power amplifiers, T/R switches, and single-chip front-end monolithic microwave integrated circuits.
What makes NP12-0B stand out is its versatility. The platform delivers a rare combination of high output power, low insertion loss switching, and low noise figure, pushing the performance envelope further than before.
Key Performance Metrics
At 18GHz and 40V, output transistors tuned for maximum power deliver 7.9W/mm saturated output power with 13.3dB gain and 42% power-added efficiency.
When tuned instead for maximum efficiency, the same power cell produces 6.1W/mm saturated output power with 14.6dB gain and 55% power-added efficiency at 18GHz.
The switch configuration performance is equally impressive. Common-gate devices show insertion loss below 0.4dB, handle power greater than 42dBm, and switch in under 20 nanoseconds using a 40V control voltage.
NP12-0B also brings excellent noise performance, with a typical minimum noise figure of 1dB and 10dB associated gain at 20GHz.
This comprehensive performance set, combined with reliable 40V operation, opens up new possibilities for high-performance front-end products in next-generation radio access networks, satellite communications, and radar systems.
Already in Production, Ready for Customers
The NP12-0B platform has been running in production since 2024 and comes with an Enhanced Moisture Ruggedness option that provides strong humidity resistance for plastic packaging applications.
The updated 40V Process Design Kit supporting power amplifier, switch, and low-noise amplifier designs will be available for customer download in the second quarter of 2026.
This qualification positions Win Semiconductors to support the growing demand for rugged, high-efficiency power devices in communications infrastructure, satellite systems, and defense applications where reliability at higher voltages is critical.
For engineers designing next-generation RF front ends, the NP12-0B process offers a proven platform that balances power, efficiency, and switching performance without compromising on ruggedness.
