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AmpStack 80V MOSFET Squeezes a Full Half-Bridge Into One DFN6x5 Package

THE VOLT VOTES

Alpha and Omega Semiconductor (AOS) has launched the AOPL66801, an 80V MOSFET in a symmetric half bridge configuration housed in its DFN6x5 AmpStack package, aimed at pushing power density in next generation designs.

Alpha and Omega AOPL66801 80V MOSFET for AI factories The Volt Post

The new 80V MOSFET is positioned for a wide range of power conversion applications, from megawatt scale AI data centres to everyday power tools and industrial drives.

To meet demanding power density targets, AOS uses vertically stacked die technology, integrating two MOSFETs as the high side and low side devices in a single package to form a half bridge. This stacked architecture boosts power density and frees up PCB area compared with using two separate DFN5x6 MOSFETs, enabling more compact layouts and tighter thermal and electrical design.

The AOPL66801 80V MOSFET also incorporates 

  • An optimized clip design for the switch node that links the two MOSFETs, a detail that helps cut parasitic inductance between the high side and low side devices.
  • By minimizing parasitic inductance on the PCB, the part reduces phase node voltage ringing and lowers stress on the MOSFETs during fast switching events, improving reliability and overall switching behaviour.

Because PCB layout and parasitic elements can degrade gate drive quality and switching performance, AOS has added a Kelvin sense pin to the AOPL66801 to stabilise gate voltage during large di/dt transitions. That Kelvin connection provides a cleaner, more effective drive path for the high side device, cutting losses and improving control under high current, high frequency conditions.

The device is rated for a maximum junction temperature of 175 °C, giving designers headroom for use in harsh thermal environments and high power designs.

Taken together, the advanced packaging, reduced parasitics, Kelvin sense implementation and high temperature capability translate into system level gains in power density, efficiency and robustness, particularly in applications where board space and thermal budgets are tight.

Alpha and Omega AOPL66801 80V MOSFET for AI factories The Volt Post Leadership Comment

“Our new AmpStack™ half-bridge packaging is a game-changer for designers looking to increase power density compared to solutions using two DFN5x6 packages,” said Peter H. Wilson, Sr. Director of the MOSFET product line at AOS. “In addition, by designing the package for low source parasitic inductance, we’ve drastically reduced phase node ringing and MOSFET stress. Customers don’t just get more power—they get significantly higher application reliability.”

Technical Highlights

Part Number Package VDS (V) VGS (±V) RDS(ON)
(m? max)
at VGS=10V
ID
(A)
Ciss
(pF)
Coss
(pF)
Crss
(pF)
Qg
(nC)
AOPL66801 DFN 6×5 High Side (Q1) 80 20 2.2 304 4900 1400 34 70
Low Side (Q2) 80 20 2.2 215 4900 1400 34 70

Pricing and Availability

The AOPL66801 is immediately available in production quantities, with a 16-week lead time. The unit price in 1,000-piece quantities is $6.16.

VOLT TEAM
VOLT TEAMhttps://thevoltpost.com/
The Volt Team is The Volt Post’s internal Editorial and Social Media Team. Primarily the team’s stint is to track the current development of the Tech B2B ecosystem. It is also responsible for checking the pulse of the emerging tech sectors and featuring real-time News, Views and Vantages.

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