Gen 5 SiC MOSFETs carries forward the same body diode from the Gen 4 platform but pushes the continuous junction temperature to 200? (215? for limited life), reinforcing Wolfspeed’s commitment to helping customers build systems that truly last.
Wolfspeed announced the fifth-generation silicon carbide technology and it is said to be a genuine leap forward for the next wave of 1200 V and 750 V applications in automotive and industrial markets.
Automotive OEMs are under constant pressure to hit electrification targets, but real barriers still block wider EV adoption like vehicle cost, safety concerns, range limitations, and charging infrastructure gaps.
Wolfspeed’s Gen 5 SiC MOSFET was built to tackle all of those headwinds at once. The technology sets a new benchmark for specific on-resistance (RSP), which is the core measure of efficiency relative to a MOSFET’s active die area.
System architects can now design tighter, more compact traction inverters, squeeze more miles out of each charge, and right-size the expensive batteries that drive EV costs.
Gen 5 also opens fresh SiC opportunities by swapping mechanical relays for solid-state circuit breakers, while pushing efficiency standards higher across EV charging infrastructure.
And the upside isn’t limited to cars, industrial power supplies are equally positioned to capitalize on Gen 5’s uncompromised switching performance.
Unrivaled Amperage Per SiC Area
Gen 5-based systems deliver the highest current possible at high temperatures when stacked against competitive 5 x 5 mm footprint SiC MOSFETs.
Wolfspeed’s continued optimization of RDS(ON) solves two critical design challenges:
- First, it slashes system-level conduction losses with up to a 27 percent reduction in RSP compared to today’s commercially available 1200 V solutions. The 1200 V QEM50120-25D10 hits a 175? chip-level RSP of 3.4 m?-cm², while the 750 V QEM50075-025D10 reaches 2.0 m?-cm² at the same temperature.
- Second, it cuts the need for system-level design margin thanks to ultra-low ±18 percent RDS(ON) distribution across both voltage nodes.
Designs Built to Endure
Gen 5 SiC MOSFETs carries forward the same body diode from the Gen 4 platform but pushes the continuous junction temperature to 200? (215? for limited life), reinforcing Wolfspeed’s commitment to helping customers build systems that truly last.
The MOSFETs hit benchmark RDS(ON) while maintaining excellent switching energy through the soft body diode, and overall switching losses drop further with improvements in reverse recovery charge.
A Commercially Mature Platform, Ready to Scale
Gen 5 gives customers a direct, low-risk path from design-in straight to volume production without jeopardizing automotive ramp readiness even as AI demand surges.
This is the second Wolfspeed MOSFET generation designed, manufactured, and qualified inside Wolfspeed’s ramp-ready 200 mm fabrication facility in Mohawk Valley, New York.
New product introductions, sampling, and customer validation will all run on 200 mm production material, and volume production won’t require any new manufacturing toolsets.
Leadership Comments
“With Gen 4, Wolfspeed delivered the switching breakthrough our customers needed, and less than two years later we’re introducing Gen 5 that gives engineers the most current possible with a 5×5 mm silicon carbide footprint,” said Dr. Cengiz Balkas, Wolfspeed Chief Business Officer. “What excites me most isn’t just the pace of our innovation; it’s what this technology unlocks for our customers: an accelerated path to smarter, more efficient, compact systems made for real-world conditions.”
“Our planar MOSFET technology still has innovation runway. We established Gen 5 on tools and processes our customers are familiar with to create a low-risk upgrade path for next-generation programs,” said Dr. Adam Barkley, Vice President of Power Device and Package Development. “For customers facing compressed development timelines, that means faster validation, faster qualification, and faster time to market — without sacrificing the performance they know and trust.”
To gain insights into how Wolfspeed achieved the above performance, read Dr. Barkley’s article Engineering for Outcomes: Three Ways Gen 5 Achieves Real-World Performance.
Availability & Resources
Samples for QEM50120-025D10 and QEM50075-025D10 are available for select customers through Wolfspeed’s direct sales representatives. New 750 V to 1200 V products are expected to continue launching throughout 2026 and into early 2027 as market demand and customer requirements become finalized.
Wolfspeed is proud to be demonstrating Gen 5 SiC MOSFET this week at PCIM Booth 7-435.
