ROHM has cracked a major challenge in power electronics with its new TSC3PAK package (14.00 × 18.58 × 3.50mm) for SiC MOSFETs. By flipping the heat dissipation surface to the top of the package, this design delivers automated mounting capability while matching the thermal performance of traditional through-hole packages like TO-247-4L.
This is known to enable higher efficiency and reliability in power conversion circuits for onboard chargers (OBCs) and electric compressors in xEVs.
In electric vehicles, silicon carbide adoption is moving fast. Beyond the main inverter, SiC devices are now powering OBCs and electric compressors to boost charging speeds and extend range.
The same efficiency gains are driving uptake in industrial applications high-performance server power supplies and PV inverters where every watt counts.
The through-hole problem
Traditional SiC devices have leaned on through-hole packages for their thermal advantages during high-power operation. But they come with serious drawbacks: manual mounting processes and bulky profiles that don’t play nice with compact designs.
Surface-mount SiC devices have started gaining traction to solve this, but many couldn’t match through-hole thermal performance. ROHM’s TSC3PAK finally closes that gap delivering through-hole-level heat dissipation in a surface-mount format that works with automated assembly.
Groove structure wins on safety
The package uses ROHM’s proprietary groove design to hit a class-leading creepage distance of 6.66mm. That handles AC peak voltage of 1200 V in Pollution Degree 2 environments while staying compatible with widely adopted market products. Safe insulation in high-voltage applications means lower mounting costs and better reliability.
4th Gen SiC at the core TSC3PAK products pack ROHM’s 4th Generation SiC MOSFETs, delivering low ON resistance and fast switching.
This significantly reduced switching losses during power conversion, which translates to higher application efficiency and lower power consumption.
Mass production started in June 2026. For more details, please contact your sales representative or visit the contact page on ROHM’s website.
Simulation models for all new products are available on ROHM’s official website, supporting rapid circuit design evaluation.
ROHM will continue to expand its SiC MOSFET lineup, contributing to higher performance, smaller size, and greater reliability in electronic equipment.
Ready to explore the package: TSC3PAK
