ROHM has announced that its 750 V SiC MOSFET is now being used in a Battery Backup Unit (BBU) for AI server power supplies, an area undergoing rapid change as generative AI drives new infrastructure demands. As server power systems shift toward higher voltages and high-voltage direct current (HVDC) architectures, ROHM’s device has been selected to support these next-generation designs.
With GPUs pushing higher performance and AI workloads scaling quickly, data center power consumption is rising just as fast.
To improve efficiency, the industry is increasingly moving to HVDC architectures, which reduce transmission losses across large-scale systems.
In this setup, BBUs and capacitor units (CUs) are becoming essential at the rack level, helping maintain stability and protect critical data during power interruptions or unexpected outages.
The device at the center of this deployment is the SCT4013DLL, a 750 V SiC MOSFET used in the power supply stage of a ±400 V AI server architecture.
Leveraging the inherent advantages of SiC, it supports a maximum junction temperature of 175°C, enabling reliable operation even in thermally demanding BBU environments where higher voltages and power densities lead to increased heat.
Looking ahead, next-generation 800 VDC architectures are expected to raise the voltage supplied to BBU battery packs to around 560 V. ROHM’s 750 V-rated SiC MOSFETs are well suited for these systems, offering the necessary voltage margin and performance.
HVDC power systems for AI servers also require backup solutions that can handle high voltages and large currents instantly, while keeping power loss to a minimum during faults. This is where SiC devices stand out, combining high voltage capability, efficiency, and thermal robustness making them a key enabler for modern power control.
ROHM plans to further strengthen its lineup of SiC, GaN, and silicon power devices to support continued growth in AI servers and data centers. The company is also focusing on integrated solutions that combine power devices with analog ICs, aiming to improve overall efficiency and contribute to more sustainable infrastructure.
For more details, ROHM provides extensive resources on its SiC portfolio, including the “Easy Part Finder” tool for product selection, along with design models and technical materials:
- Application Note: 4th Generation SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design
- Application Note: Application Benefits of Using 4th Generation SiC MOSFETs
- White Paper: ROHM’s 800 VDC Architecture Solutions for AI Servers
- Special Dialogue: Data Center Power Constraints Intensify Why Delta and ROHM Are Doubling Down on High Voltage Direct Current (HVDC)
