ROHM has launched the latest addition to its EcoSiC family – the 5th Gen EcoSiC MOSFETs, designed for high-efficiency power systems.
These new devices are a strong fit for automotive electric powertrains especially traction inverters for electric vehicles (xEVs), as well as high-performance power supplies for AI servers and industrial equipment such as data centers.
In recent years, the rise of generative AI and big-data workloads has driven a surge in high-performance server deployment, pushing power density higher and putting more strain on the grid.
In some regions, this is already raising concerns about localized power-supply shortages. Smart grids that combine renewable sources like solar power with existing infrastructure are emerging as part of the answer, but cutting losses during energy conversion and storage remains a major hurdle.
On the automotive side, next-generation electric vehicles are pushing for longer cruising ranges and faster charging, which in turn demands lower?loss inverters and higher?performance onboard chargers (OBCs).
Against this backdrop, SiC devices are becoming the go-to choice for high-power applications, from a few kilowatts to hundreds of kilowatts, thanks to their ability to deliver both low loss and high efficiency.
ROHM has been at the forefront of this shift. As the first semiconductor company in the world to start mass-producing SiC MOSFETs, back in 2010, ROHM helped drive down energy losses across a wide range of high-power systems.
Its early EcoSiC devices were among the first SiC products to meet automotive reliability standards such as AEC-Q101, and the 4th generation SiC MOSFETs, which entered sample supply in June 2020, are now widely adopted in both automotive and industrial markets. The series covers everything from discrete devices to modules, which has accelerated the broader uptake of SiC technology.
Now the 5th Gen EcoSiC MOSFETs raises the bar again. Through refined device structure and optimized manufacturing processes, ROHM has cut ON resistance by about 30% at high temperatures (Tj = 175°C) versus the 4th?gen products, under the same breakdown voltage and chip size.
This improvement makes it possible to build more compact units while simultaneously increasing output power especially important for high-temperature, high-power applications like xEV traction inverters.
Looking ahead, ROHM plans to expand the 5th Gen EcoSiC MOSFETs lineup with additional breakdown-voltage options and package types, while also enriching its design tools and strengthening application support.
As SiC technology moves into the mainstream, ROHM’s aims to keep driving efficiency gains in high-power systems, from xEVs and industrial drives to AI servers and renewable-energy infrastructure.
Availability
- ROHM began supplying bare dies based on its 5th-gen SiC MOSFETs in 2025 and completed development in March 2026.
- Starting in July 2026, the company will begin providing samples of discrete devices and modules that incorporate this new generation of EcoSiC MOSFETs.
Application Examples
- Automotive Systems: xEV traction inverters, onboard chargers (OBCs), DC-DC converters, electric compressors.
- Industrial Equipment: Power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos.
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