The Gen 5 GaNFast FETs and power ICs have been developed by Navitas for production at GlobalFoundries’ U.S.-based 200mm GaN-on-silicon manufacturing facility in Burlington, Vermont.
Navitas Semiconductor will begin shipping its U.S.-manufactured 5th Generation GaNFast technology in September through its strategic partnership with GlobalFoundries.
The milestone is expected to strengthen the domestic GaN manufacturing ecosystem and support growing demand for advanced power solutions in AI infrastructure, high-performance computing, industrial electrification and critical national security applications.
The Gen 5 GaNFast FETs and power ICs have been developed by Navitas for production at GlobalFoundries’ U.S.-based 200mm GaN-on-silicon manufacturing facility in Burlington, Vermont.
The companies first announced their long-term strategic partnership in November 2025. The collaboration was established to accelerate GaN technology development and expand domestic manufacturing capabilities in the United States.
Gen 5 GaNFast technology enters U.S. production
The first shipment of the Gen 5 GaNFast family marks an important step in the Navitas-GF collaboration, bringing Navitas’ latest GaN power technology into a U.S. production foundry.
Navitas has been developing GaN power semiconductor technology since 2014 and has built its GaNFast portfolio around FETs and power ICs that combine power, drive, control, sensing and protection functions.
The company has more than 300 issued and pending patents spanning GaN and SiC technologies, along with proprietary expertise in GaN process design kits (PDKs), device architectures and integrated power technologies.
For the Gen 5 platform, Navitas worked with GF to optimize its GaNFast technology and device architectures for manufacturing on GF’s advanced 200mm GaN-on-silicon process. The companies say the combination of Navitas’ power semiconductor expertise and GF’s high-volume manufacturing capabilities will provide a trusted U.S.-based source for advanced GaN power semiconductors.
650 V GaN FETs to form initial product family
The initial Gen 5 product family is expected to include 650 V GaN FETs with RDS(ON) values of 11m?, 18m?, 50m?, 120m? and 150m?.
According to the companies, the first wafers are scheduled to ship in September, followed by internal samples in October. Strategic customer samples are expected to be available before the end of the year.
The devices are aimed at applications where higher power density, efficiency and reliability are increasingly important, particularly as AI data centers and high-performance computing systems place greater demands on power infrastructure.
Building a domestic GaN supply chain
Navitas President and CEO Chris Allexandre said the first shipment demonstrates the potential of combining U.S.-based innovation with domestic semiconductor manufacturing.
“This milestone demonstrates the strength of American innovation and manufacturing,” said Chris Allexandre, President and CEO of Navitas.
He added that the partnership with GlobalFoundries establishes a U.S.-domestic manufacturing source for Gen 5 GaNFast technology and future generations, supporting AI infrastructure and high-performance computing while improving the resilience of the semiconductor ecosystem.
Kannan Soundarapandian, senior vice president of GF’s power business, said the first shipment demonstrates how the two companies are moving GaN technology from development into scalable domestic production.
“The first shipment from our U.S. manufacturing line demonstrates how GF and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply,” said Kannan Soundarapandian, senior vice president of GF’s power business.
