Infineon Technologies has expanded its CoolGaN BDS 40 V G3 bidirectional switch portfolio with two new devices, the IGK048B041S and IGK120B041S.
These additions deliver a tangible benefit for space-constrained designs, reducing PCB footprint by up to 82% while cutting component count in half. For engineers working on smartphones, notebooks, and wearables, that’s a meaningful gain in both design flexibility and integration efficiency.
Designed specifically for compact consumer electronics, the new devices support:
5 V gate drive and come in ultra-small WLCSP chip-scale packages measuring 2.1 × 2.1 mm² and 1.7 × 1.2 mm².
In terms of performance, the larger device achieves:
- An RDD(on) of 4.2 m?, while the smaller variant delivers 9 m?.
- Beyond size and resistance, these CoolGaN BDS switches stand out for their switching and leakage performance.
- Gate charge is up to 40% lower than comparable alternatives, enabling faster switching, reduced losses, and improved efficiency particularly valuable in fast-charging applications.
- At the same time, drain-drain leakage current is more than 85% lower than competing solutions, reinforcing GaN’s inherent advantages in minimizing power loss and thermal stress.
- The result is lower temperature rise, improved long-term reliability, and easier compliance with tightening safety requirements.
A key differentiator lies in their true bidirectional blocking capability. Unlike conventional silicon MOSFETs, which rely on a body diode and can allow unintended current flow, CoolGaN BDS devices can block voltage and current in both directions.
This makes the new Bidirectional switch especially well-suited for applications like USB overvoltage protection in mobile devices, where preventing reverse current is critical. They also fit naturally into load switching and power multiplexing roles within multi-rail architectures, where precise control over current direction is essential.
With these additions, Infineon’s CoolGaN BDS 40 V G3 family now includes three devices, the IGK048B041S, IGK120B041S, and the earlier IGK080B041S covering a wide range of mobile power requirements, from ultra-compact wearables to performance-driven notebooks.
The expansion also reflects Infineon’s broader momentum in GaN. Over the past year, the company has introduced more than 40 new GaN products and continues to position itself as a key partner for high-performance power solutions.
Its progress in scaling GaN manufacturing on 300 mm wafers, with initial samples already shipping, points to higher production capacity and faster time-to-market further strengthening its competitive position in the GaN landscape.
Leadership Comment
“As consumer devices continue to shrink while power demands grow, engineers face increasing pressure to deliver more from less. The new CoolGaN BDS devices directly address this challenge,” said Johannes Schoiswohl, GaN Business Line Head at Infineon. “Each device integrates the function of two back-to-back silicon MOSFETs into a single component, reducing component count by half and simplifying PCB layouts. Design teams can leverage existing driver layout, avoiding costly redesigns and accelerating time to market. The result is a leaner and more cost-effective power path.”
Availability
The IGK048B041S and IGK120B041S are available now through Infineon’s authorized distribution channels.
Detailed product information, datasheets, and ordering options are available at here.
