New Level 3 (L3) SPICE models that offer much better convergence and quicker simulation performance have been released by ROHM.
During the design phase, simulation accuracy is crucial since power semiconductor losses have a significant impact on total system efficiency.
This need was met by ROHM’s previous Level 1 SPICE models for SiC MOSFETs, which accurately replicated important device properties. However, difficulties including high computation times and simulation convergence issues made it clear that more improvement was required.
In comparison to the L1 models, the new Level 3 (L3) SPICE models use a simplified method that saves about 50% of the simulation time while maintaining computational stability and correct switching waveforms.
This simplifies device evaluation and loss assessment during the application design phase by enabling high-accuracy transient analysis of the whole circuits at a substantially faster speed.
For its 4th Generation SiC MOSFETs, ROHM has produced 37 L3 models as of April 2025. These models can be downloaded straight from the Models & Tools section of each product page. Alongside the new variants, the L1 models will remain available. Additionally, a thorough white paper that promotes model adoption is included.
In the future, ROHM remains dedicated to developing simulation technologies to make it possible to design applications with greater performance and efficiency, which will spur further advancements in power conversion systems.
The models can be downloaded from the Models & Tools section on individual 4th Generation SiC MOSFET product pages.
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