Infineon CoolSiC MOSFETs (silicon carbide power transistors) are now powering the new Toyota bZ4X EV , the latest model from the world’s top automaker. These advanced SiC MOSFETs are integrated into the onboard charger (OBC) and DC/DC converter, harnessing silicon carbide’s superior traits, lower energy losses, exceptional heat tolerance, and high-voltage performance to boost driving range and speed up charging times.
Infineon CoolSiC MOSFETs stand out with their innovative trench gate design, which shrinks on-resistance and chip dimensions for minimized conduction and switching losses, driving greater efficiency in EV powertrains.
They also feature refined parasitic capacitance and gate threshold voltage for simplified unipolar gate driving, streamlining circuits in automotive electrified drivetrains while enabling compact, reliable OBC and DC/DC systems.
Leadership Comments
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility.” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. “With our dedication and our commitment to innovation and zero-defect quality, we are well positioned to meet the growing demand for power electronics in electromobility.”
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