China unveils POWER-750H ion implanter to boost chip independence. This homegrown equipment is known to target a vital gap in power semiconductor production, matching global benchmarks in performance.
The POWER-750H uses tandem acceleration to propel high-energy hydrogen ions into silicon wafers, precisely altering electrical properties for advanced chips.
Developers overcame foreign monopolies by applying nuclear accelerator expertise to achieve stable, deep penetration beams essential for transistors and diodes.
Ion implanters rank among chipmaking’s four pillars, alongside lithography and etching tools, where import reliance posed supply risks amid global curbs.
This innovation fortifies China’s power electronics chain, aiding electric vehicles, renewables, and “dual carbon” targets through reliable domestic production.
Developer Insights
China Institute of Atomic Energy under China National Nuclear Corporation states: “We have fully mastered end-to-end R&D for tandem high-energy hydrogen ion implanters, breaking technological blockades and long-term foreign monopolies.” Core metrics hit international advanced levels after successful beam extraction, enabling full forward design from principles to integration.
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