Mitsubishi Electric India plans to launch its advanced power semiconductor devices and technology in the Indian market. MEI The organization’s commitment to providing high-efficiency semiconductor solutions to meet India’s expanding demand in the fields of home appliances, railroads, xEVs, renewable energy, and industrial applications is reaffirmed by its participation in PCIM India – New Delhi 2025.
The new DIPIPM platform, which combines gate-drive functions, protection features, and inverter circuitry into a single module, will be demonstrated to attendees at PCIM India 2025. Compact designs and increased system safety are made possible by these components.
The most recent Compact DIPIPM and SLIMDIP families, which come in both IGBT and SiC-based versions, are appropriate for solar pumps, light industrial drives, commercial HVAC, washing machines, and room air conditioners.
High-voltage HVIGBT modules, LV100 and NX industrial power modules, and automotive-grade semiconductor platforms designed for utility-scale solar inverters, wind converters, EV charging and powertrains, railway traction converters, HVDC transmission, and induction heating are just a few of the products Mitsubishi Electric India will showcase.
In addition to the Power Modules, Mitsubishi Electric India will showcase its most recent bare-die SiC MOSFETs and RC-IGBT technology, which enables devices with the best structure, low loss, and high reliability for xEV traction and charging applications.
Product Line |
Key Features |
| DIPIPM (Dual In-line Package Intelligent Power Module) | *Offers CSTBT & RC-IGBT chip technologies in a wide line-up *Available in 600V and 1200V, 5A–100A *Includes SiC-MOSFET variants and new Compact DIPIPM & SLIMDIP series |
| LV100 & NX Power Modules | *Industry-standard IGBT & SiC modules with 7th/8th gen CSTBT chipset and SLC packaging *Voltage: 1200V/1700V/2000V; Current: 225A–1800A *Includes new 8th gen LV100 & NX models |
| HVIGBT (High-Voltage IGBT) | *Modules for traction and power transmission *Voltage options: 1700V, 3300V, 4500V, 6500V; Current: 400A–2400A *High-voltage SiC up to 3300V/175A–800A *Includes new XB Series |
| Power Modules for Automotive | *Designed with integrated cooling fins and DLB technology *The Line-up of 2 in 1 circuit & 6 in 1 circuit with latest SiC & RC-IGBT chip technologies *Available in 750V/1300V, 350A–800A with on-chip current and temperature sensing *Includes new J3 Series |
Leadership Comments
Speaking on the participation, Hitesh Bhardwaj, General Manager/Business Head, Semiconductors & Devices, Mitsubishi Electric India said: “India is entering a decisive phase of Power Electronics across mobility, renewable energy infrastructure. With the introduction of latest Si and SiC semiconductor technologies to the domestic market, we aim to empower Indian manufacturers with smarter, more efficient and more reliable technologies. Our long-term vision is to support the country’s innovation ecosystem and contribute to sustainable growth across industry and society.”
MEI power semiconductor devices most recent offering enhances access to globally proven semiconductor innovation designed for future-ready applications as the country’s manufacturing environment shifts toward smarter power architectures and better energy efficiency standards.
