These Vertical GaN Semiconductors are particularly suited for high-power, energy-intensive markets including AI data centers, where higher power density enables cost-effective, compact 800V DC-DC converters for compute systems.
As the demand for energy surges amid advances in AI data centers, electric vehicles, and renewable energy, onsemi has announced a breakthrough in power semiconductor technology with its new vertical gallium nitride (vGaN) semiconductors. Built on proprietary GaN-on-GaN technology, these next-generation power devices set a new standard for power density, efficiency, and ruggedness, addressing critical energy needs across a wide range of applications.
Unlike traditional lateral GaN devices that conduct current across the chip surface, onsemi’s innovative Vertical GaN Semiconductors technology enables current to flow vertically through the gallium nitride substrate.
This vertical architecture supports higher operating voltages up to 1,200 volts and beyond and faster switching frequencies. The result is a significant reduction in energy losses by nearly 50%, along with smaller, lighter power systems to reduced cooling requirements and compact passive components like capacitors and inductors.
onsemi’s R&D team in Syracuse, New York, has developed this breakthrough power architecture backed by over 130 global patents covering a range of fundamental processes, device designs, and system innovations. The company is currently sampling both 700V and 1,200V vGaN devices to early access customers.
These Vertical GaN Semiconductors are particularly suited for high-power, energy-intensive markets including AI data centers, where higher power density enables cost-effective, compact 800V DC-DC converters for compute systems.
Electric vehicles also benefit from smaller, lighter, and more efficient inverters that increase driving range and reduce system size. Additionally, renewable energy sectors such as solar and wind can dramatically reduce energy loss with higher voltage inverters.
Other key applications include fast and rugged charging infrastructure, energy storage systems, industrial automation including robotics, and aerospace, defense, and security markets needing high reliability and ruggedness.
The introduction of vGaN technology marks a pivotal step toward minimizing energy waste and shrinking the footprint of power systems that support today’s accelerating digital transformation and electrification trends.
By enabling power conversion at higher voltages and frequencies with superior efficiency, onsemi’s semiconductors help customers build smaller, cooler, and more reliable systems, contributing to significant operational cost savings and sustainability goals.
Leadership Comments
Dinesh Ramanathan, Senior Vice President of Corporate Strategy at onsemi, emphasized the significance of this breakthrough: “Vertical GaN is a game-changer for the industry and cements onsemi’s leadership in energy efficiency and innovation. As electrification and AI reshape industries, efficiency has become the new benchmark that defines the measure of progress. The addition of vertical GaN to our power portfolio gives our customers the ultimate toolkit to deliver unmatched performance. With this breakthrough, onsemi is defining the future where energy efficiency and power density are the currency of competitiveness.”
