Navitas Semiconductor declared that their GaNSense Control ICs will power Xiaomi’s upcoming 90W GaN charger.
This ultra-compact, high-power-density form-factor, which is the smallest 90 W charger in the world, is only 34 × 45 × 34 mm in size and weighs only 65 grams, which is about half the size and a third the weight of standard GaN chargers.
The charger incorporates the NV9701 synchronous rectification controller integrated circuit on the secondary side and the NV9580 GaNSense Control power IC on the primary side from Navitas. High-frequency control capabilities and fourth-generation GaN power are combined in the GaNSense Control series.
For high-density, high-efficiency chargers, adapters, and auxiliary power designs, it offers all the advantages of a monolithically integrated GaN power FET and GaN drive in addition to a controller and protective features in a single surface-mount package.
GaNSense Control ICs deliver the highest-frequency operation to minimize system size and weight. Integrated features such as lossless current sensing, high-voltage start-up, and elimination of VDD inductor reduce component count and increase system efficiency.
With transient voltage breakdown up to 800 V and no PCB hotspots, Navitas’ GaNSense Control ICs deliver best-in-class efficiency in the smallest form factor.
Leadership Comments
“The launch of Xiaomi’s 90W GaN charger marks a new milestone in our long-standing collaboration with Xiaomi,” said Charles Zha, SVP and APAC GM of Navitas. “Combining the innovation of GaNSense Control ICs and Xiaomi’s leading system expertise, we have delivered a new benchmark for ultra-portable fast-chargers. Navitas will continue our partnership with Xiaomi to continue future innovations with our GaN technology.”
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