For AI data centers and server power supply systems, such as the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage, and solar inverters, Renesas Electronics unveiled three new high-voltage 650V GaN FETs.
These fourth-generation plus (Gen IV Plus) devices, which are intended for multi-kilowatt-class applications, combine silicon-compatible gate drive inputs with high-efficiency GaN technology to drastically reduce switching power loss while maintaining the ease of use of silicon FETs.
The devices, which come in TOLT, TO-247, and TOLL package configurations, allow engineers to tailor their board design and thermal management to particular power topologies.
The New TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS Devices Leverage:
- Robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings.
- Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.
With a lower RDS(on) of 30 milliohms (m?), the new Gen IV Plus products reduce on-resistance by 14 percent and increase on-resistance output-capacitance-product figure of merit (FOM) by 20 percent. They are built on a die that is 14 percent smaller than the preceding Gen IV platform.
Higher efficiency and power density are the effects of lower output capacitance and lower system expenses caused by the smaller die size. Because of these benefits, Gen IV Plus devices are perfect for thermally demanding, cost-conscious applications where small size, high performance, and efficiency are essential.
They preserve current engineering investments while being completely compatible with current designs for simple upgrades.
They offer one of the widest packaging options to support thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling.
They are available in tiny TOLT, TO-247, and TOLL packages. When larger conduction currents are required, the new surface-mount packages’ bottom side (TOLL) and top-side (TOLT) thermal conduction channels for lower case temperatures make device paralleling simpler.
Additionally, clients have greater thermal potential to obtain higher power using the widely used TO-247 package.
Unique d-mode Normally-off Design for Reliability and Easy Integration
Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN.
As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.
Electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion are driving the rapid growth of GaN-based switching devices as essential technologies for next-generation power semiconductors.
They offer greater efficiency, a higher switching frequency, and smaller footprints than silicon-based semiconductor switching devices and SiC.
Unlike many providers whose success in the area has been mostly limited to lower power devices, Renesas is ideally positioned in the GaN market with its comprehensive solutions, delivering both high- and low-power GaN FETs.
Renesas is able to meet a wider range of customer needs and applications because to its varied portfolio. More than 20 million GaN devices for high- and low-power applications have been sold by Renesas to date, amounting to more than 300 billion hours of field use.
Leadership Comments
“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”
Availability
The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are available today, along with the 4.2kW Totem-pole PFC GaN Evaluation Platform (RTDTTP4200W066A-KIT). More information about Renesas’ GaN solutions is available at: renesas.com/gan-fets.
