Toshiba Electronic Devices & Storage Corporation has introduced four 650V SiC MOSFETs, which are equipped with the company’s latest 3rd generation SiC MOSFET chips and housed in a compact DFN8x8 package.
These MOSFETs are suitable for industrial equipment such as switched-mode power supplies and photovoltaic power conditioners.
The new 650V SiC MOSFETs are the first 3rd generation SiC MOSFET to adopt the compact surface-mount DFN8x8 packaging, which decreases volume by more than 90% compared to lead-inserted packages like TO-247 and TO-247-4L(X) while increasing equipment power density.
Surface mounting also enables for the use of parasitic impedance components that are smaller than those found in lead-inserted packages, which reduces switching losses.
The new devices are the first third-generation SiC MOSFETs to adopt the compact surface-mount DFN8x8 packaging, which decreases volume by more than 90% compared to lead-inserted packages like TO-247 and TO-247-4L(X) while increasing equipment power density.
Surface mounting also enables for the use of parasitic impedance components that are smaller than those found in lead-inserted packages, which reduces switching losses.
Features
- DFN8x8 surface-mount package. Enables equipment miniaturization of and automated assembly. Low switching loss.
- Toshiba’s 3rd generation SiC MOSFETs
- Good temperature dependence of drain-source On-resistance by optimization of drift resistance and channel resistance ratio
- Low drain-source On-resistance x gate-drain charges
- Low diode forward voltage: VDSF=-1.35V(typ.) (VGS=-5V)
DFN8x8 is a 4-pin package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55% and turn-off loss by approximately 25% compared to current Toshiba products, helping to reduce power loss in equipment.
Volume shipments of the four devices, “TW031V65C,” “TW054V65C,” “TW092V65C,” and “TW123V65C,” start today.
Applications
- Switched mode power supplies in servers, data centers, communications equipment, etc.
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies
Main Specifications
| (Unless otherwise specified, Ta=25?) | |||||||
| Part number | TW031V65C | TW054V65C | TW092V65C | TW123V65C | |||
| Package | Name | DFN8x8 | |||||
| Size (mm) | Typ. | 8.0×8.0×0.85 | |||||
| Absolute maximum ratings | Drain-source voltage VDSS (V) | 650 | |||||
| Gate-source voltage VGSS (V) | -10 to 25 | ||||||
| Drain current (DC) ID (A) | Tc=25°C | 53 | 36 | 27 | 18 | ||
| Electrical characteristics | Drain-Source On-resistance RDS(ON) (m?) | VGS=18V | Typ. | 31 | 54 | 92 | 123 |
| Gate threshold voltage Vth (V) | VDS=10V | 3.0 to 5.0 | |||||
| Total gate charge Qg (nC) | VGS=18V | Typ. | 65 | 41 | 28 | 21 | |
| Gate-drain charge Qgd (nC) | VGS=18V | Typ. | 10 | 6.2 | 3.9 | 2.3 | |
| Input capacitance Ciss (pF) | VDS=400V | Typ. | 2288 | 1362 | 873 | 600 | |
| Diode forward voltage VDSF (V) | VGS=-5V | Typ. | -1.35 | ||||
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