In a common-source configuration, ROHM has developed a 30V N-channel MOSFET (AW2K21) that, in a compact 2.0mm × 2.0mm package, achieves an industry-leading ON-resistance of 2.0m? (typ.).
As smartphones and other compact devices with large-capacity batteries become more popular, there is an increasing demand for rapid charging capabilities to reduce charge periods. When not actively supplying or receiving power, these applications need bidirectional protection to stop reverse current flow to peripheral integrated circuits and other components.
Smartphone manufacturers have strict requirements for MOSFETs, such as a maximum current rating of 20A, a breakdown voltage between 28V and 30V, and an ON-resistance of 5m? or less, because quick charging requires high current power transmission.
However, using common solutions to achieve these requirements usually requires the use of two massive low ON-resistance MOSFETs, which increases mounting complexity and board area.
An ultra-compact low ON-resistance MOSFET designed for quick high-power charging was created by ROHM in response. The AW2K21 has a unique topology that reduces the ON-resistance per unit chip surface while increasing cell density. Because two MOSFETs are combined into one package, a single component can provide bidirectional protection applications, which are frequently needed in circuits for power supplies and charging.
The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures.
This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.
For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively.
Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.
The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.
Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.
Key Product Characteristics
Application Examples
- Smartphones
- Tablets
- Laptops
- VR (Virtual Reality) headsets
- Wearables
- Portable gaming consoles
- Compact printers
- LCD monitors
- Drones
And other applications equipped with fast charging capability.
Online Sales Information
Sales Launch Date: April 2025
Pricing: $3.5/unit (samples, excluding tax)
Online Distributors: DigiKey™, Mouser™ and Farnell™
Applicable Part No: AW2K21
The product will be offered at other online distributors as it becomes available.
