The PCIM Europe 2025 Expo & Conference, held from May 6–8 in Nuremberg, Germany, marked a significant milestone in the evolution of power electronics.
With over 600 exhibitors and more than 450 presentations, PCIM Europe 2025 showcased groundbreaking advancements in Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies, underscoring their pivotal roles in driving efficiency, performance, and sustainability across various industries.
Expanding Horizons: PCIM 2025’s Growth Reflects Industry Momentum
To accommodate the surging interest and participation, PCIM 2025 expanded its exhibition space by adding two new halls, bringing the total to six.
This expansion provided a broader platform for companies to present their latest innovations in power electronics, intelligent motion, renewable energy, and energy management.
Lisette Hausser, Vice President PCIM at Mesago Messe Frankfurt GmbH, remarked, “The considerable interest from suppliers demonstrates the high relevance of the exhibition and presentation program with topics covering the entire power electronics value chain.”
SiC Innovations: Enhancing Efficiency and Power Density
Infineon Technologies: Advancing Wide-Bandgap Solutions
Infineon showcased its CoolSiC MOSFETs 650 V and 1200 V Generation 2, highlighting their potential to improve overall energy efficiency. The company also presented its expanded portfolio of GaN solutions, offering a wide range of innovative packages, discrete, and integrated solutions.
Vishay Intertechnology: Introducing the MaxSiC Series
Vishay unveiled its new 1200 V MaxSiC series SiC MOSFETs, featuring on-resistances of 55 m?, 95 m?, and 280 m? in standard packages suitable for industrial applications.
The company’s proprietary MOSFET technology, enabled by its acquisition of MaxPower Semiconductor, positions Vishay to address market demands in traction inverters, photovoltaic energy conversion and storage, onboard chargers, and charging station applications.
Navitas Semiconductor: Launching Gen-3 Fast SiC MOSFETs
Navitas introduced its Gen-3 Fast (G3F) 650 V and 1200 V SiC MOSFETs, optimized for high-speed switching performance.
These devices offer a 40% improvement in hard-switching figures-of-merit compared to competitors, making them ideal for applications in AI data centers, EV chargers, and solar energy systems.
GaN Breakthroughs: Pushing the Boundaries of Power Conversion
Transphorm: Showcasing SuperGaN® Platform
Transphorm highlighted its SuperGaN® platform, demonstrating its ability to outperform competitive wide-bandgap technologies in higher power systems.
The platform’s higher electron mobility results in lower crossover losses compared to Silicon Carbide, making it a cost-effective, high-performing solution for electric vehicles, data centers, renewable energy, and other industrial applications.
Navitas Semiconductor: Presenting GaNSafe and GaNSense Technologies
Navitas showcased its GaNSafe technology, touted as the world’s most protected and highest-performance GaN power solution. Additionally, the company introduced its Gen-4 GaNSense Half-Bridge ICs, the most integrated GaN devices, and Gen-3 Fast GeneSiC power FETs, designed for motor drive and energy-storage applications.
System-Level Solutions: Integrating SiC and GaN for Enhanced Performance
Arrow Electronics: Demonstrating Holistic Power Architectures
Arrow Electronics presented a portfolio of advanced technologies, including SiC and GaN solutions, aimed at redefining power conversion, energy efficiency, and performance scaling.
The company’s demonstrations highlighted how these technologies are enabling smarter, smaller, and more robust power architectures across applications such as electric vehicles, battery management systems, and renewable energy infrastructure.
Industry Leaders’ Insights: Emphasizing the Importance of SiC and GaN
Prof. Leo Lorenz, General Conference Director, PCIM Conference
“Forming the backbone of key technologies, power electronics are both a driver of innovation and a crucial part of a sustainable future. Given the global challenges, their continuous development is essential.”
Guy Moxey, VP of Power Development, Wolfspeed
Moxey emphasized how SiC is transforming industrial e-mobility, offering superior efficiency and power density over traditional silicon. He noted that SiC plays a key role in enhancing efficiency across components such as inverters, HVAC systems, and DC/DC converters, spanning 200 V to 2,000 V, which is crucial for sectors like off-highway vehicles, aviation, and maritime.
PCIM 2025 Sets the Stage for a Sustainable Future
PCIM Europe 2025 underscored the transformative potential of SiC and GaN technologies in power electronics. The innovations presented at the event highlight a collective industry effort to enhance efficiency, reduce carbon footprints, and drive sustainable solutions across various sectors.
As these technologies continue to evolve, they promise to play a pivotal role in shaping a more energy-efficient and sustainable future.
