Renesas Electronics announced industry’s first Bidirectional GaN Switch using depletion-mode (d-mode) GaN technology. The TP65B110HRU blocks both positive and negative currents in a single device with integrated DC blocking perfect for single-stage solar microinverters, AI data centers, and onboard EV chargers. It replaces clunky back-to-back FET switches with one low-loss, fast-switching, easy-to-drive solution.
Key Specs That Matter:
- ±650Vcontinuous peak AC/DC, ±800V transient rating
- 110 m?Rss,on @ 25°C, 3V Vgs(th) – no negative drive needed
- >100 V/nsdv/dt immunity, ±20V Vgs max
- TOLTtop-side cooled package with standard pin-out
- 2kV HBM/CDMESD protection
Single-Stage Power = Higher Efficiency, Fewer Parts
Traditional silicon/SiC switches only block one direction, forcing multi-stage designs. Solar microinverters, for example, need four-switch full bridges + extra DC-link caps.
Renesas’ bidirectional GaN flips the script. A single-stage solar microinverter now needs just two TP65B110HRU SuperGaN® devices cutting switch count in half, ditching bulky caps, and hitting 97.5%+ efficiency with blazing-fast GaN switching.
Silicon-Driver Friendly + Hard-Switching Beast
Unlike finicky e-mode GaN, Renesas’ normally-off d-mode technology works with standard silicon gate drivers no negative bias headaches. It pairs a high-voltage bidirectional GaN chip with two low-voltage silicon MOSFETs (3V threshold, ±20V gate margin, built-in body diodes).
This means simpler gate loops, stable soft/hard switching, and >100 V/ns dv/dt for Vienna rectifiers with minimal ringing. True bidirectional power conversion, built tough.
Live Reference Designs
Check renesas.com/tp65b110hru for solar microinverter and EV charger implementations.
Leadership Comment
“Extending our SuperGaN technology to the bidirectional GaN platform marks a major shift in power conversion design norms,” said Rohan Samsi, Vice President, GaN Business Division at Renesas. “Customers can now achieve higher efficiency with fewer switching components, smaller PCB area and lower system cost. At the same time, they can accelerate design by leveraging Renesas’ system-level integration with gate drivers, controllers and power management ICs.”
Renesas will showcase the latest bidirectional GaN switch and its growing portfolio of intelligent power solutions in booth #1219 at the Applied Power Electronics Conference (APEC), in San Antonio, Texas, March 22-26, 2026.
Availability
The TP65B110HRU bi-directional GaN switch is available in quantity today.
Customers can also purchase the RTDACHB0000RS-MS-1 evaluation kit for testing with different drive options, detect AC zero crossings and implement ZVS soft switching.
