ROHM has developed a new generation of 650V IGBTs designed to deliver lower conduction losses and higher short-circuit tolerance for automotive and industrial power electronics.
The company says its 4th Generation 650V IGBTs achieve a class-leading* conduction loss of VCE(sat) = 1.55V, while offering a short-circuit withstand time of up to 7 µs at Tj = 25°C. The automotive-grade devices also comply with the AEC-Q101 reliability standard.
The new 650V IGBTs are targeted at applications including electric vehicle compressors, high-voltage (HV) heaters and industrial inverters, where designers are looking for higher efficiency, improved reliability and more compact system designs.
Balancing efficiency and short-circuit tolerance
As electric vehicles increasingly move toward higher-voltage architectures, silicon carbide (SiC) devices are gaining ground in high-power applications such as traction inverters. However, 650V silicon IGBTs remain widely used in lower-power auxiliary systems, including electric compressors and HV heaters.
IGBTs also continue to play an important role in industrial equipment, particularly in motor and compressor applications, where demand for efficient and compact power conversion is expected to grow.
ROHM says these applications require power devices that can reduce energy losses while maintaining sufficient short-circuit tolerance. In inverter and heater circuits, the devices must be able to withstand a short circuit long enough for the system to detect the overcurrent condition and shut down safely.
To address these requirements, ROHM redesigned the IGBT device structure, including its semiconductor process and edge termination structure. The resulting 4th Generation architecture is designed to increase current density while reducing both conduction and switching losses.
The new structure also addresses the traditional trade-off between low-loss operation and short-circuit capability. According to ROHM, the devices can maintain a 7 µs short-circuit withstand time at Tj = 25°C, helping improve both system efficiency and reliability.
Multiple packages and configurations
ROHM’s initial lineup includes 12 products in the TO-247N package, covering the RGAxxTS65HR and RGAxxTS65EHR series.
The company has also introduced 10 bare wafer products under the SG83xxWN series.
In addition, ROHM is developing 12 products in the TO-247-4L package, covering the RGAxxTR65HR/RGAxxTR65EHR series.
Design models and other materials required for circuit development are available for download through ROHM’s official website.
The TO-247N devices and selected bare wafer products are already available, with a sample price of $8.50 per unit, excluding tax. TO-247N products can also be purchased online through distributors including DigiKey and Farnell.
Expanding the 650V IGBT portfolio
The company plans to expand the range in the existing packages and is also developing more compact surface-mount IGBT solutions. These include devices using the TO-263L package and packages supporting top-side cooling (TSC).
The company says the broader portfolio will target higher-efficiency drive systems and further miniaturisation across automotive and industrial equipment, as power electronics designers continue to demand more efficient and reliable switching technologies.
*According to ROHM, based on its comparison of automotive-grade 650V-class IGBTs.
Product Lineup
Discrete Products
Bare Wafer Products
Application Examples
- Automotive electric compressors
- Automotive HV heaters (PTC heaters, coolant heaters)
- Industrial equipment inverters
Support Information
ROHM’s official website provides SPICE models that faithfully reproduce the electrical characteristics of the products in simulations, PLECS models for electrical circuit simulation, and other materials needed for circuit design.
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