With the ALATTIS program underway, Navitas will now build on that foundation to shatter the 6.5 kV ceiling, securing next-generation 10 kV production entirely onshore.
Navitas Semiconductor has secured a U.S. Army contract to push the boundaries of silicon carbide (SiC) technology into ultra-high-voltage territory.
Following a rigorous competitive evaluation of leading U.S. SiC players, Navitas was awarded the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) prototype program. The initiative is sponsored by the Army Research Laboratory (ARL) under DEVCOM and supported by the Joint Experimentation and Technology Accelerator (JETX).
The primary goal of the ALATTIS project is to bridge a critical gap in the U.S. supply chain. Currently, a domestic manufacturing process for 10 kV SiC insulated-gate bipolar transistors (IGBTs) simply does not exist.
Through iterative design, fabrication, and rigorous testing, Navitas is tasked with developing and validating a novel manufacturing process for these 10 kV IGBTs and associated PiN diodes.
This leap in ultra-high-voltage capability is aimed directly at advancing heavy-duty power electronics for mission-critical military systems and critical national infrastructure.
The Army ultimately tapped Navitas due to the company’s established track record in defense-grade reliability and its highly resilient, U.S.-anchored manufacturing ecosystem. Navitas is already a heavyweight in the SiC space; its GeneSiC™ power portfolio, driven by a flagship trench-assisted planar (TAP) MOSFET architecture, currently scales from 650 V up to 6.5 kV.
With the ALATTIS program underway, Navitas will now build on that foundation to shatter the 6.5 kV ceiling, securing next-generation 10 kV production entirely onshore.
Navitas has pioneered multiple industry firsts in UHV SiC, including:
- 6.5 kV SiC thyristors in 2010, recognized with a 2010 R&D 100 Award
- 10–15 kV PiN diodes in 2012
- 6.5 kV SiC MOSFETs commercial release in 2021
Leadership Comment
“The ALATTIS award marks a significant milestone in advancing ultra-high-voltage silicon carbide (SiC) power devices and recognizes Navitas’ over 20 years of innovation in delivering reliable, ultra-high-voltage, high-power SiC technologies,” said Siddarth Sundaresan, SVP and Chief Technology Officer at Navitas. “This program enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10 kV SiC IGBTs built on our unique, patented trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies.”
To learn more about Navitas’s capabilities in UHV SiC technology: Reach Here
