The EiceDRIVER Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC, and GaN gate driver power supply is presented by Infineon Technologies. Infineon expands its line of power devices with the 2EP1xxR family, giving designers an isolated gate driver supply option.
The devices can be used to supply isolated gate drivers in a space-efficient and cost-effective way by implementing asymmetrical output voltages.
Because of this, the 2EP1xxR is especially well-suited for consumer or industrial applications that call for isolated gate drivers, such as drive applications, energy storage systems, solar applications, electric car charging, welding, and uninterruptible power supply.
The 2EP1xxR Family Comes In A:
- Compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage.
- The family is optimized for asymmetric gate driver supply through its unique duty-cycle adjustment capability.
- The devices support a wide input voltage range up to 20 V.
- They also offer integrated temperature, short-circuit and undervoltage lockout (UVLO) protection to prevent unwanted system faults.
The 2EP1xxR family is available in the following four product variants: 2EP100R and 2EP101R are optimized for low component count designs for IGBT and SiC MOSFET gate driver power supplies.
2EP110R allows fine adjustment of the duty-cycle to match the output voltage ratio to the application requirements of SiC and GaN power switches.
2EP130R is optimized for highly flexible designs to meet different application requirements.
The device offers 5-stage overcurrent protection, 41 selectable switching frequencies or synchronization with external PWM for transformer matching, and 41 selectable duty-cycle options to adjust the output voltage.
Availability
All four variants are now available. Further information is available here.
In addition, the evaluation boards EVAL-2EP130R-VD, EVAL-2EP130R-PR and EVAL-2EP130R-PR-SIC are available to support customer evaluation.
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