AWL-Electricity, a Canadian company that pioneered MHz resonant capacitive coupling power transfer technology, have partnered with Infineon Technologies. With the help of Infineon CoolGaN GS61008P, AWL-Electricity to create advanced wireless power solutions, opening up new avenues for addressing power issues across a range of industries.
Through the agreement, industry-benchmark wireless power efficiencies are achieved by combining AWL-E’s inventive MHz resonant capacitive coupling power transfer system with Infineon’s state-of-the-art gallium nitride (GaN) technology.
The GaN transistor technology(CoolGaN GS61008P) from Infineon operates at the greatest switching frequencies and provides the maximum efficiency and power density.
As a result, AWL-E can extend the life of its system, lower operational expenses and downtime, and enhance customer usability. The technology allows for a new degree of seat dynamics and interior experiences in the vehicle industry.
It offers almost limitless degrees of design freedom in industrial systems, including robotic applications or autonomous guided vehicles.
Furthermore, the technique makes it possible to construct a completely sealed system, doing away with the requirement for charging ports and helping to lower battery consumption worldwide.
“With our partner approach we prove once more the ability to unlocking the full system-level benefits of Infineon’s CoolGaN technology, enabling compactness and efficiency,” said Falk Herm, Global Partnership & Ecosystem Management at Infineon’s Power & Sensor Systems (PSS) Division at Infineon. “The combination of AWL-E and Infineon’s complementary capabilities demonstrates how the features of GaN, namely operating at MHz frequencies, change the paradigm of what can be done with power transistors, driving greener and better performing products.”
“Infineon uniquely brings you into their family with a recognition that a strong ecosystem ultimately solves today’s power needs,” said Francis Beauchamp-Verdon, Co-founder, VP and Business Development Director at AWL-E. “Infineon’s GaN transistors, eval boards, and partner opportunities have boosted acceptance of our GaN-based MHz power coupling systems.”
With the widest range of silicon (like SJ MOSFETs and IGBTs), silicon carbide (like Schottky diodes and MOSFETs), and gallium-nitride-based (e-mode HEMT) devices, including bare die, discretes, and modules, Infineon is a prominent player in power semiconductors and the only manufacturer currently mastering all power solutions.
For Further Info on Infineon’s GaN technology, CLICK HERE
