Toshiba Rolls Out Next-Gen dual SiC MOSFET Module for Heavy-Duty Industrial Equipment.
As industrial sectors like rail transport and renewable energy demand increasingly smaller yet more powerful components, Toshiba has launched a new high-endurance power module to meet the challenge.
The newly released dual SiC MOSFET module, designated IX800FXF2YMS4 is designed to drive efficiency and reliability in heavy-duty applications, including railway traction inverters, industrial motor controls, and renewable power generation systems.
At the heart of the module are Toshiba’s third-generation SiC chips, which boast a 3300V drain-source voltage rating and an 800A drain current capacity.
One of the most critical challenges in these high-stakes industrial environments is surviving abnormal power spikes without frying the system. To address this, Toshiba optimized the module’s chip design to safely handle sudden surges. The diode section features a certified I²t limit of 300kA²s, providing a highly reliable buffer against unexpected surge currents.
Beyond ruggedness, the new module is built to maximize energy efficiency. It delivers a low drain-source on-voltage of 1.4V to significantly cut down on conduction losses.
Combined with reduced turn-on (185mJ) and turn-off (175mJ) switching losses, the module operates with far less wasted energy. For manufacturers, this directly translates to improved overall equipment efficiency and the ability to integrate much smaller, lighter cooling systems.
To ensure long-term durability, the product is housed in Toshiba’s iXPLV™ package, which utilizes advanced silver sintering bonding technology. This manufacturing technique dramatically improves heat resistance, allowing the bonded SiC chips to safely sustain the 175°C channel temperatures required by high-stress industrial equipment.
This launch brings Toshiba’s iXPLV™ packaged SiC MOSFET lineup to four distinct modules, expanding the toolkit for engineers looking to build the next generation of compact, highly efficient industrial hardware.
Applications
- Industrial equipment
- Railway traction inverters and converters
- Renewable energy power generation systems
- Power conversion systems (solid-state transformers (SST)[5]; uninterruptible power supplies (UPS); energy storage systems (ESS), etc.)
- Industrial motor control equipment, etc.
Features
- Specifies I2t limit value (Diode) rating: I2t=300kA2s
- Low drain-source on-voltage (sense): VDS(on)sense=1.4V (typ.)
- Low switching loss: Eon=185mJ (typ.), Eoff=175mJ (typ.)
- Channel temperature rating: Tch=175°C
- Adopts the iXPLVTM package.
Follow the link below for more on the new product.
IX800FXF2YMS4
Follow the link below for more on Toshiba’s SiC power device lineup.
SiC Power Devices
