In both consumer electronics and industrial applications, a variety of trends—such as portability, electrification, and weight reduction—are becoming increasingly prominent. Compact and effective designs are necessary for all of these trends. They also work well with non-traditional PCB designs that have compact space requirements that restrict the usage of external components. Infineon Technologies has added the CoolGaN Drive product family to its GaN range in order to tackle these issues.
It is made up of two parts: the CoolGaN Drive HB 650 V G5 devices, which combine two transistors with integrated high- and low-side gate drivers in an LGA 6×8 package, and the CoolGaN Drive 650 V G5 single switches, which integrate one transistor with gate driver in PQFN 5×6 and PQFN 6×8 packages.
“For several years, Infineon has been focused on accelerating innovation in GaN to provide targeted solutions for real-world power challenges”, said Johannes Schoiswohl, Senior Vice President & General Manager, GaN Systems Business Line Head at Infineon. “The new CoolGaN Drive product family is another proof point of how we support our customers in developing compact designs with high power density and efficiency through GaN.”
The CoolGaN Drive family offers a wide range of single switches and half bridges with integrated drivers based on the recently announced CoolGaN Transistors 650 V G5. Depending on the product group, the components feature a bootstrap diode and are characterized by loss-free current measurement, and adjustable switch-on and switch-off dV/dt.
They also provide OCP/OTP/SCP protection functions. As a result, the devices enable higher switching frequencies, leading to smaller and more efficient system solutions with high power density. At the same time, the bill of materials (BoM) is reduced. This not only results in a lower system weight, but also reduces the carbon footprint.
Availability
Samples of the half-bridge solutions are available now. Single-switch samples will be available starting Q4 2024.
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