Infineon Technologies introduces first product in its new advanced power MOSFET technology 80 V MOSFET OptiMOS 7. Compared to the previous generation, the RDS(on) of the Infineon IAUCN08S7N013 80 V MOSFET OptiMOS 7 has been reduced by more than 50 percent. Now the best RDS(on) in the industry with a maximum of 1.3 m? said the official release.
Named IAUCN08S7N013, the Infineon 80 V MOSFET OptiMOS 7 Features
- Significant increased power density.
- Available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package.
- Perfect match for the upcoming 48 V board net applications.
- Infineon 80 V MOSFET OptiMOS 7 is designed specifically for the high performance, high quality and robustness.
- Tailored for demanding automotive applications like automotive DC-DC converters in EVs, 48 V motor control, for instance electric power steering (EPS), 48 V battery switches and electric two- and three-wheelers.
Key Benefits For Infineon 80 V MOSFET OptiMOS 7 Users
- Benefits from minimized conduction losses.
- Superior switching performance.
- Highest power density in a 5 x 6 mm² package.
- The IAUCN08S7N013 also features low package resistance and inductance.
- High avalanche current capability.
- For automotive applications, it has an extended qualification that goes beyond AEC-Q101.
Availability
The IAUCN08S7N013 is in mass-production and available now. For More Information, Click Here
Infineon at Embedded World
Embedded World will take place in Nuremberg from 9 to 11 April, 2024, Germany. Infineon will present its products and solutions for decarbonization and digitalization in hall 4A, booth #138 and virtually. Company representatives will also hold several TechTalks as well as presentations at the accompanying Embedded World Conference, followed by discussions with the speakers.
You must be logged in to post a comment.