STMicroelectronics Page EEPROM is a hybrid memory designed for applications that must meet strict space and power requirements. It combines the speed and capacity of a Flash memory with the power efficiency and robustness of an EEPROM.
The new memories meet the growing need for storage in embedded applications, which are required to execute data-hungry edge-AI algorithms and enable ever-more-complex features. In the case of behind-the-ear hearing aids, for instance, Page EEPROM can lower the cost of materials and contribute to the development of more streamlined and comfortable devices.
With densities of 8Mbit, 16Mbit, and 32Mbit, ST’s Page EEPROM family significantly expands storage compared to conventional EEPROM chips. For tasks like data logging, embedded smart page-management enables byte-level write operations.
It also supports page/sector/block wipe, as well as page-program up to 512 bytes for effective firmware over-the-air (OTA) updates. Additionally, the devices support buffer loading, which reduces the time needed to load software in production by programming multiple pages at once.
While the write-cycle durability of 500,000 cycles is many times more than that of traditional serial Flash, the data-read speed of 320 Mbit/s is around 16 times faster than ordinary EEPROM.
Additionally, Page EEPROM reduces power supply noise and extends the operating time of battery-operated devices with its innovative peak-current management.
In addition to having a deep power-down mode with quick awakening that lowers the current to less than 1µA, the write current is lower than that of many traditional EEPROMs.
The data is retained for 100 years, ensuring longevity. ST’s 10-year product longevity program, which ensures long-term product availability, includes the devices.
To Learn How To Interact With Page EEPROM
The X-NUCLEO-PGEEZ1 expansion board and X-CUBE-EEPRMA1 software package are available now, for users to learn how to interact with Page EEPROM and adopt the new devices in application designs.
The software includes a demonstration application that shows how to test the memory’s hybrid architecture and quickly build a proof of concept.
Availability and Pricing
The M95P08, M95P16, and M95P32 Page EEPROMs are in production now and available from $0.50 for the 8Mbit M95P08. The X-NUCLEO-PGEEZ1 is ready to order from the eSTore at the budgetary price of $40.00.
Applications
In addition to wearables, Page EEPROM is ideal for applications such as healthcare devices, asset trackers, e-bikes, as well as other industrial and consumer products.
Key Comments
“The intelligent edge has evolved quickly and is profoundly changing demands on embedded memory storage density, performance, and power consumption,” said Philippe Ganivet, STMicroelectronics EEPROM Product Line Manager. “Our new Page EEPROM is the perfect ultra-low-power memory to complement a microcontroller for remote IoT modules that operate on battery power.”
“ST’s Page EEPROM is the perfect non-volatile memory, a true best-of-both-worlds solution that enabled us to achieve the ambitious targets we set when creating the latest generation of our flagship product family of GPS trackers, IoT devices, and all other designs where high performance, high reliability, small size, and low power are required,” said Patrick Kusbel, owner of BitFlip Engineering, one of the first customers to use the new memory ICs. “The M95P is up to 50 times faster yet consumes as little as one-tenth the power and delivers five times the reliability — at 500k writes compared to 100k writes — typical of other parts we used before. It’s a game changer.”
