The strategic partnership between ROHM Co., Ltd. (ROHM) and TSMC for the development and mass manufacturing of GaN power devices for electric vehicles applications was announced.
In order to satisfy the increasing need for power devices with better high-voltage and high-frequency characteristics than silicon, the collaboration will combine TSMC’s industry-leading GaN-on-silicon process technology with ROHM’s device development knowledge.
Currently, GaN power devices are utilized in both industrial and consumer applications, including server power supply and AC adapters. As a pioneer in green manufacturing and sustainability, TSMC backs GaN technology because of its potential environmental advantages in automotive applications including electric vehicle (EV) inverters and on-board chargers.
The alliance expands on the previous cooperation between TSMC and ROHM in GaN power devices. The 650V GaN high-electron mobility transistors (HEMT) from TSMC were adopted by ROHM in 2023.
As part of ROHM’s EcoGaN series, these transistors are increasingly being utilized in consumer and industrial products, such as the 45W AC adaptor (rapid charger) “C4 Duo” made by Innergie, a division of Delta Electronics, Inc.
Key Comments
“GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology” said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry.”
“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “By combining TSMC’s expertise in semiconductor manufacturing with ROHM’s proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”
