It is critical to increase energy efficiency as data centers grow more power-hungry to handle the massive processing demands of AI workloads. A solution that provides unmatched efficiency and strong thermal performance in a reduced footprint for data center applications is created by the powerful combination of onsemi’s EliteSiC 650V MOSFETs and most recent generation T10 PowerTrench® family.
“Our latest solution can significantly reduce power losses that occur during the energy conversion process and have a meaningful impact on the demands for the next generation of data centers.”
An AI-supported engine request uses more than ten times as much power as a standard search engine request, which means that in less than two years, the world’s data center power requirements are predicted to reach an estimated 1,000 TWh.
Energy must be sent from the grid to the processor four times in order to perform a single AI-supported request, which can lead to a 12% energy waste. By utilizing the EliteSiC 650V solution and the T10 PowerTrench series, data centers may minimize power losses by around 1%. The approach has the potential to cut energy usage in data centers worldwide by 10 TWh annually, which is the amount of energy needed to power roughly one million homes for a year.
For data centers and energy storage systems, the EliteSiC 650V MOSFET provides better switching performance and reduced device capacitances to increase efficiency.
These new silicon carbide (SiC) MOSFETs have halved the gate charge and cut the energy stored in the output capacitance (Eoss) and output charge (Qoss) by 44% when compared to the previous generation.
Comparing them to super junction (SJ) MOSFETs, they can also greatly minimize switching losses due to their superior performance at high temperatures and lack of tail current during turn-off. Customers can reduce system expenses overall by doing this by downsizing system components and boosting operation frequency.
Separately, the T10 PowerTrench Family provides improved thermal performance and enhanced power density in a small footprint. It is designed to withstand high currents, which are essential for DC-DC power conversion stages. Shield gate trench design, with its ultra-low gate charge and RDS (on) of less than 1 milliohm, makes this possible.
Furthermore, to guarantee peak performance, dependability, and resilience under pressure, the reduced Qrr and gentle recovery body diode efficiently reduce ringing, overshoots, and electrical noise.
Additionally, the T10 PowerTrench Family satisfies the exacting requirements needed for automotive applications. Additionally, in order to accommodate the upcoming generation of high-power CPUs, hyperscale operators have insisted that the integrated system fulfill the strict Open Rack V3 (ORV3) base specification.
“AI and electrification are reshaping our world and skyrocketing power demands. Accelerating innovation in power semiconductors to improve energy efficiency is key to enabling these technological megatrends. This is how we power the future responsibly,” said Simon Keeton, group president, Power Solutions Group, onsemi. “Our latest solution can significantly reduce power losses that occur during the energy conversion process and have a meaningful impact on the demands for the next generation of data centers.”
For Further Info: T10 PowerTrench® family | EliteSiC 650V MOSFETs
