The first Extreme High Bandwidth Memory (X-HBM) architecture for AI chips was unveiled by NEO Semiconductor. Designed to satisfy the increasing demands of high-performance computing and generative AI, X-HBM offers unparalleled performance with a 32K-bit data bus and up to 512 Gbit per die, far outperforming the constraints of conventional HBM with 10X higher density or 16X larger bandwidth.
Key Features and Benefits:
- Scalable – Enables faster data transfer between GPUs and memory for more efficient AI scaling.
- High-Performance – Unlocks untapped GPU capabilities to boost AI workloads.
- Sustainable – Reduces power and hardware needs by consolidating AI infrastructure.
By removing long-standing restrictions in bandwidth and density, X-HBM, which is based on NEO’s own 3D X-DRAM architecture, marks a significant advancement in memory technology.
On the other hand, HBM5, which is currently under development and is anticipated to be released in 2030, is only slated to enable 40 Gbit per die and 4K-bit data buses.
Even HBM8, which is anticipated to be released around 2040, will only provide 80 Gbit per die and 16K-bit buses, according to a recent study by the Korea Advanced Institute of Science and Technology (KAIST).
By contrast, X-HBM offers 512 Gbit per die and 32K-bit buses, enabling AI chip designers to avoid the ten years of performance constraints that come with conventional HBM technology.
Leadership Comments
“X-HBM is not an incremental upgrade, it’s a fundamental breakthrough,” said Andy Hsu, Founder & CEO of NEO Semiconductor. “With 16X the bandwidth or 10X the density of current memory technologies, X-HBM gives AI chipmakers a clear path to deliver next-generation performance years ahead of the existing roadmap. It’s a game-changer for accelerating AI infrastructure, reducing energy consumption, and scaling AI capabilities across industries.”
NEO Semiconductor’s CEO, Andy Hsu, will deliver a keynote presentation on August 6, at 11 a.m. PST at FMS: the Future of Memory and Storage, where he will discuss the breakthrough X-HBM technology. The event takes place August 5-7, 2025, at the Santa Clara Convention Center in California, USA. NEO Semiconductor will also be exhibiting at booth #507.
