Vishay 40 V MOSFET in PowerPAK 10×12 Package

Vishay unveiled a new 40 V TrenchFET Gen V n-channel power MOSFET with best in class on-resistance in the PowerPAK® 10×12 packaging, which will increase efficiency and power density for industrial applications. The Vishay Siliconix  SiJK140E offers 58% lower on-resistance than 40 V MOSFETs in the TO-263-7L, while cutting on-resistance by 32% when compared to competitive devices in the same footprint.

The Device That Was Launched Improves:

• Thermal performance with a low RthJC of 0.21 °C/W typical.
• Reduces power losses from conduction to promote efficiency.
• With on-resistance down to 0.34 mW typical at 10 V.
• The SiJK140E additionally increases mean time between failures (MTBF) and reliability.
• Enable designers to use a single device rather than two in parallel to achieve the same low on-resistance.

The bond-wireless (BWL) architecture of the MOSFET maximizes current capability while minimizing parasitic inductance.

The new device provides a continuous drain current up to 795 A for enhanced power density while maintaining a strong SOA capability, whereas TO-263-7L solutions in bond-wired (BW) packages are restricted to currents of 200 A.

The device’s PowerPAK 10×12 packaging, which has a 120 mm2 area, has a 50% lower profile and saves 27% PCB space when compared to the TO-263-7L.

For OR-ing, hot swap switching, and synchronous rectification, the SiJK140E is perfect. Motor drive controls, power tools, plasma cutting machines, welding equipment, robots, battery management systems, and 3D printers are examples of typical uses.

The high threshold voltage of 2.4Vgs provided by the standard-level FET helps prevent shoot-through in these items. The MOSFET is 100% Rg and UIS tested, and it is halogen-free and RoHS-compliant.

Comparison Table PPAK10x12 vs TO-263-7L

Availability

Samples and production quantities of the SiJK140E are available now, with lead times of 36 weeks.