A new line of half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers that are radiation-hardened and radiation-tolerant was unveiled by Texas Instruments (TI). The first space-grade GaN FET driver in the industry, capable of operating at up to 200V, is part of this family of gate drivers.
The devices support three voltage levels and come in ceramic and plastic package options that are pin-to-pin compatible. Engineers can use a single chip supplier to design satellite power systems for all kinds of space missions thanks to TI’s developments in space-grade power products.
Why it matters
The need for higher-resolution imaging, more precise sensing, and more on-orbit processing and data transmission has led to an increase in the complexity of satellite systems. Engineers work to increase the electrical power system’s efficiency in order to enhance mission capabilities.
TI’s new gate drivers are designed to accurately drive GaN FETs with fast rise and fall times, improving power-supply size and density. This allows a satellite to more effectively use the power generated by its solar cells to perform mission functions.
Optimizing size, weight and power (SWaP) using GaN technology can:
- Improve electrical system performance.
- Extend mission lifetimes.
- Reduce satellite mass and volume.
- Minimize thermal management overload.
Designers can use the family for applications spanning the entire electrical power system.
- The 200V GaN FET gate driver is suitable for propulsion systems and input power conversion in solar panels.
- The 60V and 22V versions are intended for power distribution and conversion across the satellite.
TI’s family of space-grade GaN FET gate drivers offers different space-qualified packaging options for the three voltage levels, including:
- Radiation-hardened; Qualified Manufacturers List (QML) Class P and QML Class V in plastic and ceramic packages, respectively.
- Radiation-tolerant Space Enhanced Plastic (SEP) products.
John Dorosa, a TI systems engineer, will present “How to easily convert a hard-switched full bridge to a zero-voltage-switched full bridge” on Tuesday, March 18, 2025, at 9:20 a.m. Eastern time at the Applied Power Electronics Conference in Atlanta, Georgia. This industry session will feature TI’s TPS7H6003-SP gate driver.
Availability
Production quantities of the TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP and TPS7H6005-SEP are available now on TI.com.
Preproduction quantities of the TPS7H6015-SEP and TPS7H6025-SEP are also available, with the TPS7H6005-SP, TPS7H6015-SP and TPS7H6025-SP available for purchase by June 2025. Additionally, development resources include evaluation modules for all nine devices, as well as reference designs and simulation models.
| Plastic | Ceramic | ||
| Voltage | Radiation-tolerant | Radiation-hardened | Radiation-hardened |
| 200V | TPS7H6005-SEP | TPS7H6005-SP | TPS7H6003-SP |
| 60V | TPS7H6015-SEP | TPS7H6015-SP | TPS7H6013-SP |
| 22V | TPS7H6025-SEP | TPS7H6025-SP | TPS7H6023-SP |
Leadership Comments
“Satellites perform critical missions, from providing global internet coverage to monitoring climate and shipping activity, enabling humans to better understand and navigate the world,” said Javier Valle, product line manager, Space Power Products at TI. “Our new portfolio enables satellites in low, medium and geosynchronous earth orbits to operate in the harsh environment of space for an extended period of time, all while maintaining high levels of power efficiency.”
For more information, read the technical article, “How you can optimize SWaP for next-generation satellites with electronic power systems.”
