With programmable protections and comprehensive diagnostics that enable ISO 26262 ASIL D certification, the STMicroelectronics STGAP4S galvanically isolated automotive gate driver for SiC MOSFETs and IGBTs provides versatility in controlling inverters of varying power ratings. The STGAP4S offers a highly functional and safe driver for scalable EV powertrain designs thanks to its integrated flyback controller and analog-digital converter (ADC).
The output circuit of the STGAP4S, which enables scaling the gate-current capability by connecting the high-voltage power stage to an external MOSFET’s push-pull buffer, is responsible for its adaptability.
Engineers can use the STGAP4S and its many functions in this architecture to manage inverters with varying power ratings, including high-power designs that use multiple power switches in simultaneously. With extremely tiny MOSFETs, the driver can produce gate-drive currents of up to tens of amperes and manage an operating voltage of up to 1200V.
One of the driver’s primary characteristics is its sophisticated diagnostics, which enable system-safety integrity for safety-critical applications up to ISO 26262 level D (ASIL-D).
Self-checks to confirm connection integrity, gate-drive voltages, and proper internal circuitry operation, including desaturation and over-current monitoring, are all part of the diagnostics. The IC’s SPI interface allows the host system to access the diagnostic-status register. Furthermore, two diagnostic pins offer hardware-detectable failure status indicators.
The STGAP4S allows for robust and durable designs that satisfy demanding reliability requirements thanks to safeguards including active Miller clamping, under-voltage and over-voltage lockout (UVLO, OVLO), desaturation, overcurrent, and over-temperature monitoring. The device’s SPI-programmed characteristics, which include protection levels, deadtime, and deglitch filtering, provide a great deal of design flexibility.
The STGAP4S also integrates a fully protected flyback controller. This can be optionally used to generate the supplies of the high-voltage section for the positive and negative gate-driving signals for fast, efficient switching of SiC MOSFETs. The galvanic barrier provides 6.4kV of isolation between the low-side circuitry and the high-side sections.
The EVALSTGAP4S evaluation board, now available, includes two STGAP4S drivers to help complete evaluation of their features in a half-bridge application. The design lets users easily connect more boards together to evaluate more complex topologies such as a three-phase inverter.
The STGAP4S is in production now, in a SO-36W wide-body dual-inline package, priced from $4.66 for orders of 1000 units.
