ROHM developed this ultra-high-speed gate driver IC that maximizes GaN performance helping applications that use high-speed switching devices.
Pinning a deep understanding of GaN technology and the continuing pursuit of gate driver performance – ROHM announces BD2311NVX-LB – a gate driver IC optimized for GaN devices and achieves gate drive speeds on the order of nanoseconds (ns) – ideal for high-speed GaN switching.
Given ROHM’s vast innovation capabilities in gate drive IC GaN Technology, the new gate driver IC enables fast switching with a minimum gate input pulse width of 1.25ns that contributes to smaller, more energy efficient, higher performance applications.
ROHM developed this ultra-high-speed gate driver IC that maximizes GaN performance helping applications that use high-speed switching devices.
ROHM also continues to release smaller WLCSP products to support greater miniaturization.
ROHM also offers a lineup of GaN devices under the EcoGaN™ name – contributing to a sustainable society through power solutions when combined with gate driver ICs that maximize their performance. The gate driver BD2311NVX-LB with the unique gate overvoltage suppression feature – when used with ROHM’s EcoGaN™ products – further simplifies the design and enhances application reliability.
Professor Yue-Ming Hsin, Department of Electrical Engineering, National Central University, (Taiwan) said, “GaN devices are expected to be materials that can demonstrate performance in the high-frequency range more than silicon. In power switching applications such as DC-DC and AC-DC converters, and in LiDAR applications, the performance of GaN devices can contribute to smaller, more energy-efficient, and higher-performance applications.
On the other hand, to demonstrate the performance of GaN devices, gate driver IC that enable high-speed switching while taking into account the low drive voltage of GaN HEMTs are essential. Therefore, we turned our attention to ROHM, which aims to maximize the performance of GaN devices by developing optimized gate drive technology. Professor Yu-Chen Liu (National Taipei University of Technology) and Professor Chin Hsia (Chang Gung University), who are working together on the same project, tested ROHM’s driver IC, the BD2311NVX.
The results showed that BD2311NVX had shorter rise time and lower ringing at 1MHz switching frequency for DC-DC converter compared to other driver ICs.
The reduced rise time of this driver IC will help maximize the reduction in switching losses, which is an advantage of GaN. We are also looking forward to ROHM’s GaN solutions, which have strengths in analog technologies in power supplies and drivers.”
LiDAR Application Example
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