ROHM will implement Infineon’s cutting-edge top-side cooling platform for SiC, which includes the TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages, as part of the MOU.
Memorandum of Understanding between ROHM and Infineon Technologies on packages for silicon carbide (SiC) power semiconductors used in energy storage systems, AI data centers, on-board chargers, and photovoltaics. In particular, the partners want to make it possible for one another to serve as second sources of specific packages for SiC power devices.
This is known to give their customers more options when it comes to design and procurement. Customers will eventually be able to source devices from both ROHM and Infineon that have compatible housings. The partnership will guarantee smooth interchangeability and compatibility to meet particular customer demands.
ROHM will implement Infineon’s cutting-edge top-side cooling platform for SiC, which includes the TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages, as part of the MOU. One advantage is top-side cooling platform is that all packages have the same height of 2.3 mm.
In addition to improving board area usage and enabling up to two times more power density, this simplifies designs and lowers cooling system costs.
In order to create a suitable package, Infineon will concurrently take on ROHM’s DOT-247 package with a SiC half-bridge architecture. This will add SiC half-bridge options to Infineon’s recently announced Double TO-247 IGBT portfolio. Compared to conventional discrete packages, ROHM’s sophisticated DOT-247 offers a better power density and requires less assembly work.
With a special structure that combines two TO-247 packages, it can lower inductance by 50% and heat resistance by about 15% when compared to the TO-247. The benefits include a power density that is 2.3 times greater than that of the TO-247.
In the future, The duo intend to broaden their partnership to encompass more packages utilizing not only silicon but also wide-bandgap power technologies like SiC and GaN. In addition to giving clients access to an even wider selection of solutions and sourcing choices, this will further solidify the partnership between the two businesses.
By switching energy even more efficiently, semiconductors based on SiC have enhanced the performance of high-power applications, enabling further compact designs and excellent reliability and durability under harsh conditions.
Customers may create energy-efficient solutions and boost power density for uses like AI data centers, renewable energy systems, and electric vehicle charging by utilizing ROHM’s and Infineon’s SiC technologies.
Leadership Comments
“We are excited about working with ROHM to further accelerate the establishment of SiC power devices,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. “Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization.”
“ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions,” said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. “By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, ultimately shaping the future of the power electronics industry.”
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