ROHM has developed N-channel power MOSFETs with industry-leading* low ON-resistance and a wide SOA capability. They are intended for power supplies used in high-performance enterprise and AI servers.
The growth of high-level data processing technologies, together with the acceleration of digital transformation, has raised demand for data center servers. At the same time, the number of servers with high computing capabilities for AI processing is increasing and is projected to continue to do so.
These servers run 24 hours a day, seven days a week, providing uninterrupted operation. As a result, conduction losses due to the ON-resistance of many MOSFETs in the power block have a major impact on system performance and energy efficiency.
This is especially visible in AC-DC conversion circuits, where conduction losses account for a significant amount of total power loss, highlighting the necessity for low ON-resistance MOSFETs.
Furthermore, servers with a conventional hot-swap function, which allows for the replacement and maintenance of internal boards and storage devices while the power is turned on, face a significant inrush current during component exchanges. Therefore, to safeguard server components and MOSFETs from damage, a wide Safe Operating Area (SOA) tolerance is required.
To solve these problems, ROHM created the novel DFN5060-8S package, which allows for the packaging of a bigger die than typical designs, resulting in a range of power MOSFETs with industry-leading* low ON-resistance and wide SOA capabilities. These innovative products make a substantial contribution to improving efficiency and reliability in server power circuits.
The new lineup includes three products. The RS7E200BG (30V) is optimized for both secondary-side AC-DC conversion circuits and hot-swap controller (HSC) circuits in 12V power supplies used in high-performance enterprise servers. The RS7N200BH (80V) and RS7N160BH (80V) are ideal for secondary AC-DC conversion circuits in 48V AI server power supplies.
All Three Models Feature:
- The newly developed DFN5060-8S package (5.0mm ×0mm).
- The package increases the internal die size area by approximately 65% compared to the conventional HSOP8 package (5.0mm ×0mm).
- As a result, the RS7E200BG (30V) and RS7N200BH (80V) achieve ON-resistances of 0.53m? and 1.7m? (at VGS = 10V), respectively – both of which rank among the best in the industry in the 5.0mm ×0mm class, significantly contributing to higher efficiency in server power circuits.
Furthermore, ROHM has optimized the internal clip design to improve heat dissipation and SOA tolerance, which helps to ensure application reliability. The RS7E200BG (30V) MOSFET achieves double the SOA tolerance of standard HSOP8 MOSFETs at a pulse width of 1ms and VDS = 12V, resulting in industry-leading SOA performance in a 5.0mm × 6.0mm footprint.
ROHM intends to progressively commence mass manufacturing of power MOSFETs compatible with hot-swap controller circuits for AI servers in 2025, as part of its ongoing effort to broaden its assortment and contribute to increased efficiency and reliability in a variety of applications.
Application Examples
- AC-DC conversion and HSC circuits for 12V high-performance enterprise server power supplies
- AC-DC conversion circuits for 48V AI server power supplies
- 48V industrial equipment power supplies (i.e. fan motors)
Availability: now
Pricing: $5.50/unit (samples, excluding tax)
Online Distributors: DigiKey™, Mouser™ and Farnell™
The products will be offered at other online distributors as they become available.
Applicable Products: RS7E200BG, RS7N200BH, RS7N160BH
