ROHM Unveils 650V GaN HEMT in TOLL Package: A Breakthrough in Power Efficiency
650V GaN HEMT in TOLL package is the latest innovation from ROHM, aimed at revolutionizing power electronics by offering compact size, high-heat dissipation, and superior efficiency.
With the global push toward decarbonization, improving motor and power supply efficiency is essential. The adoption of Gallium Nitride (GaN) devices is accelerating due to their high power-handling capacity, reduced energy loss, and high-speed switching capabilities.
ROHM’s latest GNP2070TD-Z GaN HEMT, developed in collaboration with ATX SEMICONDUCTOR (WEIHAI) CO., LTD., a leading OSAT (Outsourced Semiconductor Assembly and Test) provider, is set to redefine power device performance in industrial and automotive applications.
Advancements in ROHM’s 650V GaN HEMT Technology
1. Compact TOLL Package for Higher Efficiency
ROHM’s second-generation GaN HEMT integrates GaN-on-Si chips into a TOLL (TO-LeadLess) package, ensuring:
- Superior heat dissipation, enabling high-power operations with minimal thermal buildup.
- Compact footprint, making it ideal for high-density power applications.
- Industry-leading efficiency, reducing power loss and improving system reliability.
This new TOLL package strengthens ROHM’s GaN lineup, complementing the existing DFN8080 package and catering to market demand for smaller, more efficient power solutions.
2. Unmatched Performance for High-Power Applications
The 650V GaN HEMT achieves best-in-class performance metrics by optimizing the RDS(on) × Qoss value, a key index measuring ON-resistance and output charge. The benefits include:
- Lower conduction losses, leading to improved efficiency in power conversion.
- High-speed switching, reducing heat generation and improving device longevity.
- Minimized power consumption, enhancing the sustainability of power systems.
Industry Adoption & Market Demand
1. Driving Innovation in Industrial and Automotive Sectors
With the growing adoption of GaN devices in automotive applications, ROHM is positioning itself as a leader in next-generation semiconductor solutions. The TOLL package makes these devices suitable for:
- Electric vehicles (EVs): Enhancing power conversion in on-board chargers and DC-DC converters.
- Industrial power supplies: Improving efficiency in servers, base stations, and energy storage systems (ESS).
- Renewable energy applications: Optimizing solar inverters for enhanced energy conversion.
2. Collaboration with ATX and TSMC for Mass Production
ROHM has strategically partnered with TSMC (Taiwan Semiconductor Manufacturing Company) for front-end wafer processing and ATX SEMICONDUCTOR for back-end assembly and testing. This collaboration ensures:
- Scalability for mass production, meeting the increasing demand for automotive-grade GaN devices.
- High manufacturing efficiency, leveraging the expertise of two leading semiconductor companies.
- Rapid market introduction, enabling early adoption of GaN technology in automotive and industrial sectors.
3. Global Market Trends Driving GaN Adoption
The demand for power-efficient semiconductor solutions is rising due to:
- Increased global energy consumption requiring high-efficiency power devices.
- Growth in electric vehicle (EV) production, demanding compact, efficient, and reliable GaN components.
- Expansion of renewable energy infrastructure, integrating GaN for smarter, more efficient energy conversion systems.
Leadership Comments on the Breakthrough
Liao Hongchang, Director and General Manager, ATX SEMICONDUCTOR (WEIHAI) CO., LTD.
“We are honored to collaborate with ROHM in producing high-quality GaN HEMTs. This partnership strengthens our commitment to providing cutting-edge semiconductor solutions that drive energy efficiency and sustainability.”
Satoshi Fujitani, General Manager, AP Production Headquarters, ROHM Co., Ltd.
“The successful development of our 650V GaN HEMT in a TOLL package is a testament to ROHM’s technological expertise. Our vertically integrated production system and collaboration with top-tier OSATs like ATX allow us to stay ahead in the rapidly growing GaN market.”
EcoGaN™: ROHM’s Vision for a Sustainable Future
ROHM’s EcoGaN™ brand represents a new generation of GaN devices that maximize energy savings, miniaturization, and design simplification. These advancements contribute to:
- Lower power consumption in high-efficiency power applications.
- Smaller, lightweight designs with fewer external components.
- Simplified power system architectures, reducing complexity and costs.
ROHM’s Commitment to Advancing GaN Technology
The launch of ROHM’s 650V GaN HEMT in a TOLL package signifies a major breakthrough in power semiconductor technology. By integrating industry-leading efficiency, compact design, and scalable production capabilities, ROHM is paving the way for next-generation power solutions in automotive, industrial, and renewable energy markets.
With strong industry partnerships and cutting-edge GaN innovation, ROHM is poised to drive the future of energy-efficient power electronics, reinforcing its leadership in high-performance semiconductor solutions
