Infineon Technologies is launching a new line of radiation-tolerant NewSpace memory portfolio designed for the quickly expanding NewSpace sector in order to aid in the development of these applications.
Currently, around 10,000 satellites orbit the planet in low Earth orbit (LEO), giving communications, weather data, internet access, and earth observation, among other data. LEO satellites are launched in greater numbers than traditional geostationary Earth orbit (GEO) systems in order to provide adequate coverage and function in an environment with less intense radiation.
Therefore, compared to their conventional GEO counterparts, LEO spacecraft require distinct electrical components. Infineon Technologies is launching a new line of radiation-tolerant memory solutions designed for the quickly expanding NewSpace sector in order to aid in the development of these applications.
Infineon’s NewSpace memory portfolio includes three product families:
- Low-power, radiation-tolerant F-RAMs;
- QSPI NOR flash memories with 256 Mbit and 512 Mbit densities;
- 256 Mbit/512 Mbit pseudo-static RAM (pSRAM).
The term “NewSpace” describes how private companies and startups are commercializing space exploration, frequently with less government regulation than traditional space missions.
NewSpace projects seek to integrate LEO satellite constellations with the Internet of Things (IoT) to build a more efficient and connected society, motivated by the growing need for worldwide connection (direct-to-cell).
Large-scale LEO constellations can be deployed thanks to these missions, which usually use smaller satellites—from nano-sats to 250 kg Sats—and are less costly and have shorter mission durations.
Commercial off-the-shelf (COTS) components that offer strong performance without the need for conventional military or aerospace qualifications can be advantageous for many NewSpace applications due to cheaper launch costs and lower radiation exposure in low Earth orbit.
These NewSpace Memory Portfolio Offer:
- An optimal combination of performance and reliability while supporting reduced size, weight, power, and cost benefits (SWaP-c).
- The F-RAMs operate across a wide MIL temperature range of -55°C to +125?°C.
- While the NOR Flash and pSRAM devices support a range of -40°C to +125°C.
- Radiation tolerance demonstrates a total ionizing dose (TID) rating of 50 krad(Si) for the F-RAMs, 30 krad(Si) for the NOR Flash, and 100 krad(Si) for the pSRAM.
Additional Benefits of These New NewSpace Memory Portfolio Include:
- Single lot date code and 100 percent electrical testing to ensure reliable mission operation.
- With these characteristics, Infineon’s memory products are ideal for short-duration, high-redundancy, and large-scale LEO constellations.
Infineon’s pSRAM are touted as the first of their kind for NewSpace, offering a unique memory type, whose memory array is structured like DRAM internally but presents itself like static RAM (SRAM) externally.
The pSRAMs are a low-power, high-performance, and low pin-count solution that is ideal for high-throughput data buffering applications.
Radiation-Tolerant Power Solutions from IR HiRel Complement Memory Offering
For the commercial space market, Infineon’s IR HiRel group provides a wide range of radiation-tolerant power devices in addition to the NewSpace memory solutions.
The portfolio includes extremely dependable, reasonably priced power MOSFETs that are tailored for 2- to 5-year LEO missions, combining decades of experience in both the aerospace and automotive industries.
These devices are qualified to AEC-Q101 and are available in 60 V and 150 V N- and P-channel varieties. They are packaged in a sturdy plastic material and can be mounted through a hole or on the surface.
The devices meet the radiation requirements of contemporary LEO missions because they are rated for a TID of 30 krad(Si).
Availability
Infineon’s NewSpace memory and power products are available through authorized distribution partners Arrow and Avnet.
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