onsemi declared that it has successfully paid $115 million in cash to Qorvo for the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, which includes the United Silicon Carbide subsidiary.
The addition increases market potential by $1.3 billion by 2030 and solidifies leadership in high and mid voltage power semiconductors.
With the inclusion of Qorvo SiC JFET technology, onsemi will be able to meet the demand for high power density and energy efficiency in the AC-DC stage of power supply units for AI data centers, complementing its already comprehensive EliteSiC power portfolio.
By substituting a solid-state switch based on SiC JFET in battery disconnect units for several components, SiC JFETs contribute to increased efficiency and safety in electric vehicle applications. In the industrial end-market, SiC JFETs enable specific energy storage topologies and solid-state circuit breakers.
The silicon carbide (SiC) power devices and modules in the onsemi EliteSiC product portfolio have solid designs and proven quality. They also take use of onsemi’s fully integrated manufacturing capacity. SiC MOSFETs, SiC diodes, power modules composed of SiC MOSFETs and SiC diodes, and hybrid SiC/silicon modules are all members of the EliteSiC family.
With a new 1,700 V rating for higher-voltage applications, onsemi’s EliteSiC series includes a wide range of silicon carbide (SiC) MOSFETs, diodes, SiC modules, and hybrid SiC/silicon modules.
Key Comments
“This acquisition further strengthens onsemi’s leadership in power semiconductors by providing disruptive and market leading technologies to our customers to solve their most pressing power density and efficiency problems in AI data centers, automotive and industrial markets,” said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. “We will continue to innovate and make investments to expand our technology leadership in providing the most comprehensive power system solutions.”
