Samples of Mitsubishi Electric Corporation’s new LV100-type 1.2-kV IGBT module, an industrial-use power semiconductor module for solar and other renewable energy power-supply systems, will be available starting on February 15.
The module’s eighth-generation insulated gate bipolar transistor (IGBT) reduces power loss and increases the output power of inverters and other power system components, including storage batteries and photovoltaic power-generation systems.
The module will be presented at the 39th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2025) to be held at Tokyo Big Sight, Japan, from January 22 to 24, as well as other events in North America, Europe, China and additional locales.
Since their introduction in 1990, Mitsubishi Electric’s IGBT-based power semiconductor modules have received great praise for their exceptional performance and high dependability, which has led to a variety of uses in the industrial, railway, automotive, and consumer sectors.
With the original split-dummy-active (SDA1) and controlling-carrier plasma-layer (CPL2) architecture, the business has now created its eighth-generation IGBT.
The new LV100-type 1.2-kV module with eighth-generation IGBT chips reduces power loss in inverters used in solar power-generation systems, storage batteries, and other applications by about 15%4 when compared to an existing product.
Additionally, by optimizing the arrangement of the IGBT and diode chips, the current rating of 1,800A—1.5 times higher than that of the previously mentioned existing product—is attained, which is anticipated to increase inverter output power.
Additionally, inverter setups spanning a broad range of capacitances can be accommodated by the module’s standard package, which is simple to link in parallel.
