The first-to-market asymmetrical transient voltage suppression (TVS) diode made especially for protecting Silicon Carbide (SiC) MOSFET gate drivers in automotive applications, the TPSMB Asymmetrical TVS Diode Series, was introduced by Littelfuse.
By providing a small, single-component solution that replaces several Zener diodes or TVS components often used for gate driver safety, this novel device responds to the growing need for reliable overvoltage protection in next-generation electric vehicle (EV) systems.
Compared to conventional silicon-based MOSFETs or IGBTs, the TPSMB Asymmetrical TVS Diode Series offers better protection for SiC MOSFET gate drivers, which are vulnerable to overvoltage events because of their quicker switching speeds.
The TPSMB Series’ distinctive asymmetrical design accommodates the varying positive and negative gate driver voltage ratings of SiC MOSFETs, guaranteeing improved performance in a range of demanding automotive power applications that use SiC MOSFETs, such as:
- Onboard chargers (OBCs)
- EV traction Inverters
- I/O interfaces
- Vcc buses
These applications demand high-performance overvoltage protection (OVP) for SiC MOSFET gate drivers to ensure optimal performance, longevity, and efficiency.
The TPSMB Asymmetrical Series Surface-Mount TVS Diode offers the following key features and benefits:
- A Single-Component SiC MOSFET Gate Driver Protection: Eliminates the need for multiple Zener or TVS diodes, streamlining design and reducing component count.
- Asymmetrical Gate Driver Voltage Protection: Designed to protect SiC MOSFET gate drivers, which require different negative and positive voltage ratings.
- Compact Design: Available in a DO-214AA (SMB J-Bend) package, the series is ideal for space-constrained automotive designs.
- Automotive-Grade Quality: AEC-Q101-qualified, ensuring the highest reliability for automotive applications.
- High Power Dissipation: 600W peak pulse power dissipation (10×1000?s waveform) offers robust protection against transient overvoltage events.
- Low Clamping Voltage: VC < 10 V @ 30 A (8/20 µs) for optimal negative gate drive protection.
- Wide Frequency Stability: Stable capacitance across a wide operating frequency range, up to 2 MHz, making it ideal for SiC MOSFET applications.
- Compatible with Leading SiC MOSFETs: Suited for use with Littelfuse and other market-leading automotive SiC MOSFETs.
Availability
The TPSMB Asymmetrical Series TVS Diode is available in tape and reel format in quantities of 3,000. Sample requests are accepted through authorized Littelfuse distributors worldwide.
Key Comments
Charlie Cai, Director of Product Management, Protection Business, Littelfuse, emphasizes the value this product brings to automotive engineers: “The TPSMB Asymmetrical TVS Diode Series offers an innovative solution for SiC MOSFET gate driver protection, eliminating the need for multiple components and simplifying the design process for engineers. Its compact, reliable design ensures that critical automotive power systems are safeguarded against overvoltage events, supporting the continued advancement of electric vehicles and other high-performance applications.”
For a listing of Littelfuse distributors, please visit Littelfuse.com.
Additional information is available on the TPSMB Asymmetrical Series TVS Diodes product page.