Littelfuse announces the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. This innovative driver is specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial applications.
The IX4352NE Low-side SiC MOSFET and IGBT Gate Driver distinct 9-amp source and sink outputs allows:
- Customized turn-on and turn-off time while reducing switching losses, this sets it apart.
- For better dV/dt immunity and quicker turn-off, an inbuilt negative charge regulator also offers a user-selectable negative gate drive bias.
- With a maximum working voltage range of 35 V (VDD – VSS), this driver provides outstanding performance and versatility.
One of the important features of IX4352NE is its integrated negative charge pump regulator, which eliminates the need for a separate auxiliary power supply or DC/DC converter.
By turning off SiC MOSFETs, this capability is highly helpful in saving space that would otherwise be required for external logic level translator circuitry. Space-saving capabilities are further enhanced by the logic input’s typical TTL or CMOS logic level compatibility.
SiC MOSFETs are best driven by the IX4352NE in a variety of industrial applications, including:
- on-board and off-board chargers,
- Power Factor Correction (PFC),
- DC/DC converters,
- motor controllers, and
- industrial power inverters.
Due to its exceptional performance, it is perfect for high-demanding power electronics applications in the markets for smart homes, industrial, alternative energy, electric vehicles, and building automation.
The IX4352NE offers a better degree of integration and makes circuit design simpler with its extensive feature set. The power device and the gate driver are protected by built-in protection features including thermal shutdown (TSD), under voltage lockout (UVLO), and desaturation detection (DESAT) with soft shutdown sink driver.
To improve safety and dependability, the inbuilt open-drain FAULT output alerts the microcontroller to a fault situation. In addition, the IX4352NE improves circuit density and conserves important PCB area, both of which boost system efficiency.
Notable improvements over the existing IX4351NE include:
- A safe DESAT-initiated soft turn-off.
- A thermal shutdown with high threshold accuracy.
- The charge pump’s ability to operate during thermal shutdown.
Because the new IX4352NE Low-side SiC MOSFET and IGBT Gate Driver is pin-compatible, it can be easily swapped out with the 2020-released Littelfuse IX4351NE in designs that call for it.
“The IX4352NE extends our broad range of low-side gate drivers with a new 9?A sink/source driver, simplifying the gate drive circuitry needed for SiC MOSFETs,” commented June Zhang, Product Manager, Integrated Circuits Division (SBU) at Littelfuse. “Its various built-in protection features and integrated charge pump provide an adjustable negative gate drive voltage for improved dV/dt immunity and faster turn-off. As a result, it can be used to drive any SiC MOSFET or power IGBT, whether it is a Littelfuse device or any other similar component available on the market.”
Availability
The IX4352NE Low-side SiC MOSFET and IGBT Gate Driver are available in tube format in 50 per tube or tape and reel format in quantities of 2,000. Place sample requests through authorized Littelfuse distributors worldwide. For a listing of Littelfuse distributors: Littelfuse.com.
For More Information
Additional information on the latest series release is available on the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver product page.
