The first radiation-hardened (rad hard) 1 and 2 Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory chips in the market are now available, revealed Infineon.
Infineon Technologies is a major player in the space industry because of its products, which are utilized in space telescopes, Mars rover sensors, and satellites—all of which need the highest level of reliability even in the worst of circumstances.
These new rad hard 1 and 2 Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory chips to Infineon’s wide range of memory offerings offer random access and complete memory write at bus speeds, as well as unparalleled endurance and dependability with up to 120 years of data retention at 85 degrees Celsius.
Because Infineon F-RAM chips are inherently extremely durable, they are the perfect technology to meet the changing needs of space-based applications, which have traditionally relied on less durable, slower EEPROM nonvolatile storage technologies.
Faster random access to memory, enhanced data security with instantaneous non-volatile write technology, and reduced power consumption—with a maximum operating current of 20 mA and a very low programming voltage of 2 V—are some of the features that set this technology apart from competitors.
“As more space applications are architected to process data on-system, and not on-ground via telemetry, there is increasing demand for high-reliability non-volatile memory to work in tandem with space-grade processors and FPGAs for data-logging applications,” said Helmut Puchner, Vice President, Fellow Aerospace and Defense, Infineon Technologies. “Infineon introduced the first SPI F-RAM devices for this market in 2022, and the addition of parallel interface devices reflects our commitment to delivering best-in-class, highly reliable and flexible solutions for next-generation space requirements.”
Target applications for Infineon’s rad hard F-RAM devices include boot code storage, secure key storage for data encryption, data recording for calibration data, and data storage for sensors and instruments. They are appropriate for avionic and other applications that need military standard temperature grades (-55°C to 125°C) in addition to space applications.
Similar to the SPI variant, the novel Infineon parallel interface F-RAM chips exhibit remarkable non-volatile memory characteristics, such as instantaneous atomic state switching, due to their chemical makeup, as opposed to EEPROM technologies’ trapped charge to program bits.
Soft mistakes, magnetic field effects, and radiation impacts are intrinsically unaffected by F-RAM. Software management of page boundaries is not necessary, and wear leveling is not necessary due to the near-infinite durability (1013 write cycles).
The QML-V certified devices have better radiation performance of: The parallel devices are packed in 44-lead ceramic TSOP.
- TID: >150 Krad (Si)
- SEL: >96 MeV·cm 2/mg @115°C
- SEU: Immune
- SEFI: <1.34 * 10-4 err / dev.day (active/standby) / Immune (sleep mode)
Availability
The complete portfolio of rad hard F-RAM non-volatile memories, including 2 Mb SPI and 1 and 2 Mb parallel devices, is available now.
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