Infineon Technologies through its subsidiary Infineon Technologies Austria announces to have filed a patent infringement lawsuit against Innoscience (Zhuhai) Technology Company and Innoscience America and affiliates (hereinafter: Innoscience).
Under this patent infringement lawsuit, Infineon seeks a permanent injunction for infringement of a United States patent relating to gallium nitride (GaN) technology owned by Infineon.
The patent infringement lawsuit claims cover core aspects of GaN power semiconductors encompassing innovations that enable the reliability and performance of Infineon’s proprietary GaN devices. The patent infringement lawsuit was filed in the district court of the Central District of California.
Infineon alleges that Innoscience infringes the Infineon patent mentioned above by making, using, selling, offering to sell and/or importing into the United States.
The patent infringement lawsuit mentions that various products, including GaN transistors for numerous applications, within automotive, data centers, solar, motor drives, consumer electronics, and related products used in automotive, industrial, and commercial applications are the sole patent property of Infineon.
“The production of gallium nitride power transistors requires completely new semiconductor designs and processes”, said Adam White, President of Infineon’s Power & Sensor Systems Division. “With nearly two decades of GaN experience, Infineon can guarantee the outstanding quality required for the highest performance in the respective end products. We vigorously protect our intellectual property and thus act in the interest of all customers and end users.” Infineon has been investing in R&D, product development and the manufacturing expertise related to GaN technology for decades. Infineon continues to defend its intellectual property and protect its investments.
On 24 October 2023, Infineon announced the closing of the acquisition of GaN Systems Inc., becoming a leading GaN powerhouse and further expanding its leading position in power semiconductors.
