MOSFETs with a low RDS(on) and a strong linear operating mode are necessary for the safe hot-swap operation in telecom and AI servers. The new OptiMOS 5 Linear FET 2 from Infineon Technologies tackles this issue by offering the best possible trade-off between the wide safe operating area (SOA) of a traditional planar MOSFET and the RDS(on) of a trench MOSFET.
Because of its low RDS(on), the device guarantees minimal losses during operation and limits the high inrush current, preventing harm to the load.
The OptiMOS Linear FET 2 has a greater variety of packages, lower gate leakage current, and better SOA at higher temperatures than its predecessor, the OptiMOS Linear FET. This makes more MOSFETs possible.
The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers:
- A 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar RDS(on).
- The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event.
- During such events the current distribution between parallel MOSFETs is critical for the system design and reliability.
- The OptiMOS 5 Linear FET 2 features an optimized transfer characteristic that allows for improved current sharing.
In designs where the short-circuit current demand determines the number of components, the number of components can be lowered by up to 60% when considering the wide SOA and enhanced current sharing.
For a variety of applications, such as power tools, e-bikes, e-scooters, forklifts, battery backup units, and battery-powered vehicles, OptiMOS 5 Linear FET 2 permits great power density, efficiency, and dependability for battery protection.
Availability
The new OptiMOS 5 Linear FET 2 MOSFET is now available.
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